Hotspot Focus
Study on the Field Emission Performance of ZnO/Si-NPA
Keywords: Silicon Nanopore Array (Si-NPA); Zinc Sulfide (ZnS); Field Emission To investigate the effect of substrate morphology on the field emission performance of cold cathodes, zinc sulfide (ZnS)/Si-NPA was prepared via the chemical bath deposition (CBD) method using silicon nanopore arrays (Si-NPA) with either columnar or crater-like morphological features as substrates. By comparing the emission characteristics of the two samples, we examined how the morphology of the Si-NPA substrate influences its field emission performance. The results show that, compared to ZnO nanorod arrays, ZnO nanoneedle arrays exhibit a lower turn-on electric field and more...
Preparation and Performance Study of Supersaturated Sulfur-Doped Silicon Materials
Keywords: Super-saturated doping; Positron annihilation technique; Pulsed laser; Infrared-enhanced absorption. This paper reports the preparation of super-saturated sulfur-doped silicon materials by means of pulsed-laser gas-phase doping and ion implantation. The doped samples were annealed using both conventional thermal furnaces and excimer lasers. The effects of pulsed-laser fluence, wavelength, scanning rate, ion-implantation conditions, and annealing processes on the surface morphology, optical absorption, carrier concentration, and mobility of the samples were investigated. Scanning electron microscopy, Raman spectroscopy, and positron annihilation techniques were employed to characterize the surface morphology, crystal structure, and microstructural features such as defects in the samples. The experimental results indicate:
Study on the Structure, Magnetic Properties, and Transport Properties of Hexagonal MnNiGa Thin Films
Keywords: Hexagonal structure, MnNiGa, magnetron sputtering, perpendicular magnetic anisotropy, spintronics. Hexagonal MM'X materials represent a class of promising novel functional materials with magnetic phase-transition properties and have attracted considerable attention in recent years. In this study, we systematically investigated the crystal structure, magnetic properties, and transport characteristics of ternary MnNiGa thin films prepared by direct-current magnetron sputtering and using first-principles calculations under different sputtering temperatures. X-ray diffraction analysis confirmed that the MnNiGa thin films exhibit a hexagonal structure of the Ni2In type (space group P63/mmc). Scanning electron microscopy images revealed the influence of sputtering temperature on the surface morphology of the thin films.
Obtaining High-Quality Silicon-Based Gallium Arsenide Materials
Keywords: Silicon-based gallium arsenide, germanium surface, MOCVD, defect density, roughness. Silicon devices and III-V semiconductor devices represent the two major camps in the field of semiconductor devices. To achieve complementarity between these two material and device systems and to attain superior overall performance, silicon-based III-V devices have become a key focus in both industry and research. In this paper, we have achieved high-quality, flat Si-based GaAs layers by employing a Ge transition layer, a low-temperature GaAs buffer layer, and GaAs surface treatment. Using LEED, we investigated the atomic arrangement on Si-based Ge surfaces under different conditions, thereby confirming the existence of a tilted-angle Ge surface.
Keywords: Organic electronic device packaging, PECVD, organic/inorganic alternating multilayer films, water and oxygen barrier performance. In recent years, organic electronic devices have experienced rapid development and have become one of the major highlights of the electronics industry in the 21st century. According to a market analysis report by the specialized agency NanoMarkets, the future output value of the organic electronics industry is projected to exceed 300 billion U.S. dollars. Organic electronic devices are characterized by their light weight, thinness, and flexibility. Organic electronic device packaging requires low-temperature processing, flexibility, and thin-film encapsulation. Alternating multilayer films are considered the most effective approach for thin-film encapsulation. There are various methods available for fabricating such films; however, these methods must meet the requirements of low-temperature operation, high density, and flexibility.
From July 10 to 14, 2015, the "China Materials Conference 2015," the most important series of conferences organized by the Chinese Society for Materials Research, was grandly held in Guiyang, Guizhou Province. The conference featured a total of 30 sub-venues, including 4 international sub-venues and 26 domestic sub-venues. The topics covered a wide range of materials fields, such as energy and environmental materials, novel functional materials, ceramics and polymer materials, high-performance structural materials, materials design, preparation, and evaluation. To promote exchanges and cooperation among experts, scholars, and industry representatives in China’s microelectronics and optoelectronics materials sectors, and to enhance the academic standards and technological innovation capabilities in these fields, the Integrated Circuit Materials...
(Source: Application for Fiscal Funds from the NDRC) High-Tech Service Industry Cultivation Project (I) Project Priorities 1. Innovative Design Services: Support relevant enterprises in breaking through key common technologies such as information-based design, process-integrated design, and design of complex processes and systems. With a focus on green design, intelligent design, personalized customization, and design tools, accelerate the development of innovative design platforms and enhance the innovative design capabilities of key industries including equipment manufacturing, automotive, home appliances, information and communication, and energy. 2. Development of New Business Models in Inspection and Testing Services: Support the building of inspection and testing capacities and technological innovation, and foster new business models based on market demand.
Guiding Opinions of the State Council on Actively Promoting the “Internet Plus” Initiative
Guofa [2015] No. 40 To the People's Governments of Provinces, Autonomous Regions, and Municipalities Directly Under the Central Government; to All Ministries and Commissions of the State Council and All Directly Affiliated Institutions: “Internet Plus” refers to the deep integration of Internet innovation achievements with various sectors of the economy and society, thereby driving technological advancement, enhancing efficiency, and promoting organizational transformation. This initiative aims to boost the innovation capacity and productivity of the real economy, fostering a new model of economic and social development characterized by the Internet as both a fundamental infrastructure and a key innovation driver. In the context of the global new round of scientific and technological revolution and industrial transformation, the integrated development of the Internet with diverse sectors holds broad prospects and unlimited potential, having become an unstoppable trend of our times and exerting profound impacts on the economic and social development of countries worldwide.
Global FAB Plant Closures – From IC Insights
Data from IC Insights shows that between 2009 and 2014, 83 wafer fabs worldwide were either closed or retooled. Among these, fabs producing 150mm and 200mm wafers accounted for two-thirds of the total closures. Since the global economic downturn of 2008-2009, the integrated circuit industry has been striving to reduce outdated production capacity—such as fabs producing wafers ≤200mm—in order to operate equipment more economically on larger-diameter wafers. According to the latest data from IC Insights’ report “Global Wafer Capacity 2015–2019,” from 2009 to 2014, semiconductor manufacturers...
He Jinjiang (fourth from right) — On May 23, 2015, the 17th Annual Conference of the China Association for Science and Technology (CAST), jointly hosted by CAST and the Guangdong Provincial Government and themed “Leading with Innovation,” opened in Guangzhou. The conference was attended by over 2,000 participants, including leaders of the Party and the state, internationally renowned scientists—including Nobel laureates—scholars and experts from home and abroad, and representatives from prominent international science and technology organizations. During the opening ceremony, the 18th CAST Qiu Shi Outstanding Young Scientist Award was solemnly presented. Ten scientific and technological workers from across the country, including He Jinjiang, Deputy Chief Engineer of Youyan Yijin New Materials Co., Ltd., were honored with the “18th CAST Qiu Shi Award.”
The 2015 Cross-Strait Flatness Technology Forum was held at Tsinghua University.
From May 28 to 29, the 2015 Planarization Technology Conference and the Cross-Strait Planarization Technology Forum were successfully held at Tsinghua University. Under the guidance of the China Semiconductor Industry Association, the Specialized Committee on Micro- and Nano-Manufacturing Tribology, and the Strategic Alliance for Technological Innovation in Integrated Circuit Materials Industry, the conference was organized by the China Planarization Technology Alliance and hosted by Tsinghua University. More than 100 experts, scholars, and graduate students from both domestic and international fields related to planarization technology attended the forum. Among the attendees were Academician You Zheng, Assistant President of Tsinghua University and Dean of the School of Mechanical Engineering; Li Ming, Executive Deputy Director of the Department of Engineering and Materials Science at the National Natural Science Foundation of China; and representatives from the China Semiconductor Industry Association.
On May 15, the Industry Division of the Zhongguancun Administrative Committee, in collaboration with Zhongguancun Customs and integrated circuit enterprises, successfully held a symposium and exchange meeting on customs policies at the Zhongguancun Administrative Committee. More than 10 representatives from integrated circuit design and manufacturing companies in the Beijing area attended the meeting. The meeting was chaired by Xu Jian, Deputy Director of the Industry Division of the Zhongguancun Administrative Committee, and was attended by Zhang Huagang, Deputy Commissioner of Zhongguancun Customs, and Fang Rong, Director of the Industry Division of the Zhongguancun Administrative Committee. Officials from Zhongguancun Customs provided a detailed explanation of the innovative customs policies aimed at promoting the development of the integrated circuit industry, including bonded processing and policy advantages for the integrated circuit sector, regulatory requirements for bonded enterprises, and specific measures targeting...
The first joint promotion meeting for 200mm silicon wafers was held in Shanghai.
To accelerate the technological upgrade of China’s domestic 200mm silicon wafer industry, entrusted by the Overall Group of Project 02, the Integrated Circuit Materials Industry Technology Innovation Strategic Alliance has established the “Working Group for Promoting Mass Production and Application of Domestic 200mm Silicon Wafers.” The Working Group’s mission is to coordinate and integrate the progress of silicon material projects under Project 02 and the procurement of silicon wafers for mass production applications in 200mm integrated circuit materials, thereby ensuring that the set goals are achieved. On May 13, 2015, the Working Group held its “First Coordination Meeting for 200mm Silicon Wafers” at HuaHong Hongli Semiconductor Manufacturing Co., Ltd. in Shanghai. Ye Tianchun, Head of the Overall Group of Project 02 and Director of the Institute of Microelectronics, Chinese Academy of Sciences, attended the meeting.
Hubei Xingfu—A Leading Player in the Electronic-Grade Phosphoric Acid Industry
Hubei Xingfu Electronic Materials Co., Ltd. (hereinafter referred to as “Xingfu”) was established in November 2008 with a registered capital of 138 million yuan. It is controlled by Hubei Xingfa Chemical Industry Group Co., Ltd.—China’s largest fine phosphorus chemical enterprise (stock code: 600141). Xingfu is a production and trading company primarily engaged in the R&D, production, and sales of electronic-grade phosphoric acid and other electronic chemicals. Currently, Xingfu has one wholly-owned subsidiary and employs over 70 people, among whom more than 45% hold bachelor’s degrees or higher. Xingfu is an innovation-driven enterprise with a highly skilled and professionally competent R&D team that has independently developed...
The “Runma Electronics” founding project has successfully passed acceptance.
The Science and Technology SME Innovation Fund is a special government fund approved by the State Council, designed to support technological innovation activities of science and technology-based small and medium-sized enterprises. Through grant funding and other forms of financial assistance, the fund provides support and guidance for innovation initiatives undertaken by these SMEs, thereby promoting the commercialization of scientific and technological achievements and accelerating the industrialization of high-tech industries. Jiangyin Runma Electronic Materials Co., Ltd. began undertaking the innovation fund project “Ultra-Pure, High-Purity Nitric Acid for 8- to 12-Inch Integrated Circuits” (project approval code: 12C26213202529) in July 2012. The project’s implementation period is from July 23, 2012, to July 23, 2014.
Hua Jin and CanCore Semiconductor Join Forces to Develop Next-Generation SoC and SiP Solutions.
April 21, 2015, Shanghai, China—HuaJin Semiconductor Packaging Leading Technology R&D Center Co., Ltd. (hereinafter referred to as “HuaJin”), which focuses on the R&D and industrialization of advanced technologies for system-level packaging and integration, and CanCore Semiconductor (Shanghai) Co., Ltd. (hereinafter referred to as “CanCore Semiconductor”), an internationally leading ASIC design company and one-stop service provider, have officially signed a technology cooperation agreement on SoC and SiP technologies. The two parties will collaborate on high-performance flip-chip ball grid array (FCBGA) and high-density three-dimensional system-level packaging (3D—
Academician Lu Yongxiang Visits Ningbo Jiangfeng Electronic Materials Co., Ltd.
On the morning of April 1, Academician Lu Yongxiang, former Vice Chairman of the Standing Committee of the National People's Congress and former President of the Chinese Academy of Sciences, visited Ningbo Jiangfeng Electronic Materials Co., Ltd. for an inspection and research visit. He was warmly welcomed by Dr. Yao Lijun, Chairman of the company, and the founding team of Jiangfeng Electronics. During the visit, Dr. Yao Lijun first gave Academician Lu a detailed report on the achievements Jiangfeng Electronics has made in the field of ultra-high-purity metal materials and sputtering targets, supported by the nation’s Major Project 02: “Since taking on this project, Jiangfeng Electronics’ ultra-high-purity aluminum targets have captured more than 25% of the global market share, ranking first in the world. They are used in 28-nanometer…”
The alliance organization will participate in SEMICON CHINA 2015.
Integrated Circuit Materials Alliance Special Zone: The Secretariat of the Materials Alliance organized member companies to collectively participate in SEMICONCHINA 2015, held from March 17 to 19, 2015 in Shanghai. In collaboration with SEMI, the Alliance set up a “Materials Alliance Special Zone” in Hall W5, the main exhibition area for integrated circuits. Participating companies this time include Foshan Huat Gas Co., Ltd., Shanghai Cabeni Precision Ceramics Co., Ltd., Anji Microelectronics (Shanghai) Co., Ltd., Beijing Kehua Microelectronics Materials Co., Ltd., Jiangyin Jianghua Microelectronics Materials Co., Ltd., Shanghai Xinyang Semiconductor Materials Co., Ltd., and Shanghai Xin'ao Technology Co., Ltd.
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