Hotspot Focus
Hitachi Chemical announced in a press release on the 30th that, driven by increasing demand for semiconductor components and a corresponding rise in demand for semiconductor polishing materials, the company has decided to invest approximately 3 billion yen in expanding production capacity at its Taiwan and Japan facilities. The goal is to increase the production capacity of its semiconductor polishing material, “NanoCeria Slurry,” to roughly five times its current level by summer 2018. “NanoCeria Slurry” is a new product in Hitachi Chemical’s chemical mechanical polishing slurry (CMP slurry) lineup. Compared to existing products, it can reduce polishing-induced damage on semiconductor substrates to as little as one-fifth.
Recently, the National Intellectual Property Administration released the results of the 2017 evaluation for “National Demonstration Enterprises for Intellectual Property” and “National Enterprises with Intellectual Property Advantages.” A total of 182 enterprises nationwide were selected as “Demonstration Enterprises,” and Hubei Dinglong was among them.
Hubei Xingfu Electronic Materials Co., Ltd. (hereinafter referred to as “Xingfu Electronics”) has, since the commissioning of its first electronic chemicals production line— an electronic-grade phosphoric acid plant with an annual capacity of 30,000 tons—invested and built in 2010, consistently adhered to independent innovation, developed its own brand, and actively pursued market development both domestically and internationally. After nearly eight years of persistent effort and hard work, Xingfu Electronics has achieved remarkable success in developing the electronic-grade phosphoric acid market. In 2012, Xingfu Electronics officially began supplying products to companies including Singapore’s GlobalFoundries Fab7 plant (12-inch) and Fab2 plant (8-inch), as well as Malaysia’s Silterra (8-inch). 201
On the morning of January 8, 2018, the 2017 National Science and Technology Awards Ceremony was solemnly held at the Great Hall of the People in Beijing. The project “Leading-edge Technology for 22–14 Nanometer Integrated Circuit Device Fabrication,” jointly completed by the Institute of Microelectronics, Wuhan Xinxin Integrated Circuit Manufacturing Co., Ltd., and Fudan University, was awarded the Second Prize of the 2017 National Technological Invention Award. The principal contributors to the “Leading-edge Technology for 22–14 Nanometer Integrated Circuit Device Fabrication” project are Ye Tianchun, Xu Qiuxia, Chen Dapeng, Yin Huaxiang, Huo Zongliang, and Zhang Wei. Taking the support from the National Major Science and Technology Special Project No. 02 as an opportunity, the project addressed a series of critical challenges encountered during the miniaturization of core devices.
To adapt to the industry characteristics of the electronic chemical materials sector—such as high technological and market barriers, intense industry concentration, and low degree of domestic production—Zhejiang Juhua Co., Ltd. plans to advance mixed-ownership reform, accelerate the introduction of influential strategic investors and advanced technologies from both domestic and international sources, as well as outstanding talent teams, in order to pool development resources, promote the localization of electronic chemical materials products, and expedite the industry’s leapfrog development. Seizing the favorable opportunities presented by the rapid growth of China’s integrated circuit industry and the accelerating shift of global manufacturing capacity to China, and guided by the principles of “openness and sharing,” Zhejiang Juhua Co., Ltd. intends to join forces with the National Integrated Circuit Industry Investment Fund Corporation (hereinafter referred to as “the Fund”).
Shennan Circuit Co., Ltd. Successfully Listed on the Shenzhen Stock Exchange.
On December 13, 2017, Shenzhen South Circuit Co., Ltd. officially launched its initial public offering of A-shares. The stock’s abbreviated name is “Shenzhen South Circuit,” and its stock code is 002916. According to Lei, Chairman of Shenzhen South Circuit, after more than thirty years of development, the company has become a leading enterprise in its industry. Listing on the capital market marks another milestone in the company’s development. In the future, the company will make good use of the capital market platform to further improve corporate governance and continue to strengthen, optimize, and expand its business. Shenzhen South Circuit focuses on the field of electronic interconnection and is committed to becoming “a world-class integrator of electronic circuit technologies and solutions.” The company specializes in printed circuit boards, packaging substrates, and electrical...
Since the 18th National Congress of the Communist Party of China, with the increasing integration of semiconductor enterprises into the market economy, technological advancements in China’s fields—including integrated circuit design, discrete device manufacturing, packaging, and testing—have been rapidly evolving. As a result, the semiconductor materials industry has entered a new phase of accelerated development and achieved remarkable accomplishments. The semiconductor materials industry is experiencing rapid growth. First, China has made significant progress in both the technology and product quality of semiconductor materials. Five years ago, nearly all of China’s materials used for 8- to 12-inch integrated circuit manufacturing were reliant on imports. Driven by the key support provided under Project 02, as well as the National Integrated Circuit Industry Investment Fund and preferential policies aimed at fostering the integrated circuit industry,
On December 5, at the groundbreaking ceremony, Jiangyin Jianghua Microelectronics Materials Co., Ltd. successfully commenced construction of its project in Zhenjiang, which will have an annual production capacity of 228,000 tons of ultra-high-purity wet electronic chemicals, 7,000 tons of industrial-grade chemicals as by-products, and a recycling facility. The project covers an area of 180 mu, with a total investment of approximately 1.702 billion yuan. The production facilities span about 35,000 square meters, and nearly 1,700 pieces of equipment—including nearly 150 sets of testing devices—are all at internationally advanced levels. The product grades will meet SEMI standards G4 and G5, and the primary customers will be manufacturers of advanced-process semiconductor integrated circuits for 12-inch wafers and next-generation display panels.
Recently, Tiantong Co., Ltd. issued an announcement stating that, in order to advance its strategic development plan of “materials plus specialized equipment,” its wholly-owned subsidiary, Tiantong Jicheng Machine Technology Co., Ltd. (hereinafter referred to as “Tiantong Jicheng”), plans to acquire a 67% stake—valued at 3.35 million yuan—in Hunan Xintianli Technology Co., Ltd. (hereinafter referred to as “Hunan Xintianli”). The transaction price was determined through negotiation among all parties, based on a valuation of 100% equity in Hunan Xintianli at 196 million yuan, resulting in a transaction price of 131.32 million yuan. Upon completion of this acquisition, Tiantong Jicheng will hold a 67% stake in Hunan Xintianli, making it a controlling subsidiary of Tiantong Jicheng. Currently...
Recently, the Chinese Academy of Sciences announced the list of newly elected academicians for 2017. Yang Deren, Deputy Director of the Alliance Expert Advisory Committee, expert of the General Group for Special Project 02, and Professor at the College of Materials Science and Engineering, Zhejiang University, was elected as an academician of the Chinese Academy of Sciences. Professor Yang Deren has long been engaged in research on silicon single-crystal materials for ultra-large-scale integrated circuits, silicon materials for solar photovoltaic applications, silicon-based optoelectronic materials and devices, nanoscale silicon, and nanoscale semiconductor materials. His academic contributions include his leading role in semiconductor silicon material research, where he has achieved a series of innovative results. He proposed the concept of nitrogen-doping control to manage microdefects in Czochralski-grown silicon single crystals for ultra-large-scale integrated circuits, thereby systematically addressing...
"After more than five years of dedicated effort, SMIC Beijing has helped domestic equipment, material, and component enterprises achieve the industrialization of their technological breakthroughs, gradually breaking through the technological blockade and monopoly imposed by foreign manufacturers," said Zhang Xin, General Manager of SMIC Northern Integrated Circuit Manufacturing (Beijing) Co., Ltd., during the "China Semiconductor Materials and Components Development 2017 Conference" recently held in Beilun, Ningbo. At that moment, the faces of the more than 300 domestic representatives from semiconductor material and component suppliers present at the conference were filled with excitement. Finally, domestically produced materials and components—once the weakest link in China’s semiconductor industry chain—could now step forward proudly and openly.
Research on Quantum-Well Lasers for Gas Sensing
In the early 1980s, literature began to appear on gas concentration measurements using Tunable Diode Laser Absorption Spectroscopy (TDLAS). Thanks to its significant technical advantages over conventional spectroscopic detection methods, TDLAS technology quickly gained widespread adoption. Since the year 2000, research institutions and enterprises in China have conducted extensive studies on diode laser spectroscopy for detecting asymmetric gas molecules of inorganic compounds. In recent years, through technological cooperation and transfer, domestic research institutions have developed TDLAS-based online gas monitoring systems—relying on domestically produced technologies with independent intellectual property rights—that have already achieved notable success in applications such as mine operations, coal-to-gas monitoring, natural gas monitoring, and oil-and-gas field monitoring.
Research on XOI Heterogeneous Integration Materials for the Post-Moore Era
In the future, microelectronics, optoelectronic devices, and intelligent microsystems will continue to evolve toward miniaturization, integration, and intelligence. The required functionalities of microsystem chips will become increasingly complex, diversified, and seamlessly integrated. This development trend places tremendous demand on heterogeneous integration technologies. Heterogeneous integration will also open up an entirely new path for the advancement of microelectronics in the post-Moore era. By building upon the existing device and process dimensions, it will enable the development of integrated technologies that combine heterogeneous materials with multi-functional devices, thereby achieving functional diversification within a single chip—particularly in the areas of optoelectronics, microenergy, analog circuits, radio frequency components, passive devices, and MEMS devices.
Antimonide Narrow-Bandgap Semiconductor Infrared Optoelectronic Materials and Devices
Antimonide semiconductors primarily refer to compounds—including GaSb, AlSb, and InAs—that have lattice constants around 0.61 nm, as well as various multicomponent alloys derived from these materials. Among these systems, the InAs/GaSb superlattice exhibits a type-II band structure, which effectively suppresses Auger recombination and enables an ultra-wide infrared detection response covering the 2–30 μm spectral range. The InGaAsSb quantum well, on the other hand, features a type-I band structure and holds great promise for the development of high-power, narrow-linewidth lasers operating in the 2–4 μm wavelength region. Moreover, its modulation-doped heterojunctions display exceptionally high carrier mobility at room temperature, making them highly suitable for fabricating low-power, high-speed microelectronic devices. In recent years, with...