The project led by Ye Tianchun from the Institute of Microelectronics of the Chinese Academy of Sciences has won the Second Prize of the 2017 National Technology Invention Award.

On the morning of January 8, 2018, the 2017 National Science and Technology Awards Ceremony was solemnly held at the Great Hall of the People in Beijing. The project “Leading-edge Technology for 22–14 Nanometer Integrated Circuit Device Fabrication,” jointly completed by the Institute of Microelectronics, Wuhan Xinxin Integrated Circuit Manufacturing Co., Ltd., and Fudan University, was awarded the Second Prize of the 2017 National Technological Invention Award. The principal contributors to the “Leading-edge Technology for 22–14 Nanometer Integrated Circuit Device Fabrication” project are Ye Tianchun, Xu Qiuxia, Chen Dapeng, Yin Huaxiang, Huo Zongliang, and Zhang Wei. Taking the support from the National Major Science and Technology Special Project No. 02 as an opportunity, the project addressed a series of critical challenges encountered during the miniaturization of core devices.

The “Leading Technologies for 22–14 nm Integrated Circuit Device Manufacturing” project was primarily led by Ye Tianchun, Xu Qiuxia, Chen Dapeng, Yin Huaxiang, Huo Zongliang, and Zhang Wei. Taking the national key science and technology project No. 02 as an opportunity, the project conducted independent innovation and R&D to address a series of critical challenges related to short-channel effects and performance degradation during the miniaturization of core devices. The project successfully overcame technical hurdles such as post-high-k metal gate technology, 22-nanometer planar device integration technology, and key technologies for 14-nanometer three-dimensional FinFETs. It also pioneered several innovative key technologies, breaking through significant technological bottlenecks in the manufacturing of nanoscale integrated circuits and in the supporting processes for domestically produced equipment. The project proposed a “patent-driven R&D strategy,” establishing a systematic body of independent intellectual property rights and critical technologies that have had a broad impact both domestically and internationally. In terms of promotion and application, the project successfully licensed and transferred its technologies to relevant domestic manufacturing and equipment enterprises, achieving remarkable results. This has significantly enhanced the technological level of high-end integrated circuit products and advanced equipment, playing a crucial role in driving the comprehensive development of China’s integrated circuit industry.

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