Pan Xingang, Shanghai Bokang Fine Chemical Co., Ltd.
Title of the Report: Polymer Materials in Electron-Beam Photoresists Brief Introduction to the Report: In microelectronic fabrication and nanofabrication processes, electron-beam photoresists are among the most commonly used high-resolution patterning materials for creating graphic masks. The key material in electron-beam photoresists is organic polymers. This paper discusses various polymer materials used in electron-beam photoresists, covering aspects such as the monomer structures of these polymers, their different compositions, molecular weight ranges and distributions, as well as their characterization within electron-beam photoresist systems. It also elucidates how these factors influence the performance of electron-beam photoresists. Furthermore, changes in the lithographic process play a crucial role in determining the behavior of polymer materials during lithography. Finally, the author provides a list of examples.
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2015
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Report Title: Polymer Materials in Electron-Beam Photoresists
Introduction to the Report: In microelectronic fabrication and nanofabrication, electron-beam resist is a commonly used high-resolution graphic masking material. The key component of electron-beam resist is organic polymer. This paper discusses various polymer materials used in electron-beam resist, covering aspects such as the monomer structures of these polymers, their different compositions, molecular weight ranges and distributions, as well as their characterization in electron-beam resist applications. It also explains how these factors influence the performance of electron-beam resist. Furthermore, changes in the lithographic process play an important role in determining the behavior of polymer materials during lithography. Finally, the authors present a comparison of lithographic characteristics and data for domestically produced electron-beam resists.
Pan Xinggang (right)
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