Invited Speaker: Xiang Jinjuan
Engineer at the Institute of Microelectronics, Chinese Academy of Sciences
Category:
2015
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Report Title: Research on Single-Atomic-Layer Deposition of N-Type Metal TiAlC for Bulk Silicon FinFET Devices
Report Overview:
After CMOS devices entered the 16nm technology node and beyond, traditional PVD methods can no longer meet the requirements for filling back-gate structures with increasingly higher aspect ratios—especially the issue of filling the work-function metal layer in NMOS devices, which urgently needs to be addressed. Atomic Layer Deposition (ALD) technology boasts excellent step coverage, uniformity, and superior control over ultra-thin film growth; thus, it represents the ideal solution for depositing N-type metals.
This paper reports the growth of N-type metal gate materials via ALD, which can be used in bulk-Si FinFET devices at 16 nm and smaller technology nodes. In this study, four growth modes were employed to fabricate ALD TiAlX films: A. TiCl4-NH3-TMA-NH3; B. TiCl4-TMA-NH3; C. TiCl4-NH3-TMA; D. TiCl4-TMA. X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, four-point probe measurement system, and X-ray diffraction were used to characterize the chemical composition, growth rate, surface roughness, resistivity, and crystalline properties of the TiAlX films. Capacitance structures were utilized to evaluate the effective work function of the TiAlX films on high-k gate dielectrics, while FinFET devices were employed to assess the performance of these TiAlX films in actual device applications.
The experimental results show that the films grown in modes A, B, and C are primarily composed of TiAlN, whereas the film grown in mode D is primarily composed of TiAlC. TiAlC exhibits a lower and mid-band effective work function, making it particularly well-suited for tuning the threshold voltage (Vt) of bulk silicon FinFET CMOS devices. Verification has confirmed that when FinFET devices use TiAlC grown in mode D as the N-type metal gate material, the threshold voltage can be as low as 0.2 V.
Xiang Jinjuan (right)
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