Invited speaker Qian He
Professor at Tsinghua University
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2015
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Qian He is a professor at Tsinghua University, Secretary of the Party Committee of the Department of Micro- and Nano-Electronics, and Deputy Director of the Institute of Microelectronics. He graduated from Xi'an Jiaotong University with a Ph.D. in Microelectronics in 1990. From December 1990 to May 2006, he worked at the Institute of Microelectronics of the Chinese Academy of Sciences, serving as the director of the institute from September 2001 to May 2006. From June 2006 to December 2008, he worked at the Samsung Semiconductor (China) Research Institute as its director. Since January 2009, he has been teaching at Tsinghua University. During his tenure at the Institute of Microelectronics of the Chinese Academy of Sciences, he engaged in research and development in areas such as Si CMOS process technology, Si CMOS/SOI radiation-hardened circuits, and GaN microwave power devices. He has received numerous awards, including the Second Prize of the National Invention Award, the First Prize of the Beijing Science and Technology Progress Award, the Second Prize of the Chinese Academy of Sciences Science and Technology Progress Award, and the Government Special Allowance. While working at the Samsung Semiconductor (China) Research Institute, he led the development of chip application solutions for various smartphones and other information terminals, gaining valuable experience in project planning and process management within the industry. Since joining Tsinghua University, he has been teaching courses on “Microelectronic Manufacturing Process Technology” and “Introduction to Modern Semiconductor Devices.” His research focuses on: 1. Novel semiconductor memory devices; 2. Two-dimensional nanoelectronic devices; 3. Bio-detection chips.
Report Title: Selection of Resistance-Change Materials, Structures, and Electrodes in Resistive Random Access Memory (RRAM)
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