Invited Speaker: Ding Yuqiang
Professor at Jiangnan University
Category:
2015
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Ding Yuqiang, born in 1967, is a professor at Jiangnan University. He earned a Doctor of Natural Sciences degree (Dr.rer.nat.) from the University of Göttingen in Germany in 2002. Afterward, he conducted postdoctoral research at both the University of Göttingen and the Max Planck Institute for Coal Research in Germany. In 2004, he was appointed as a professor at Jiangnan University. In 2006, he was selected as an “Outstanding New Century Talent” by the Ministry of Education. In 2007, he was named among the first group of young and middle-aged scientific and technological leaders under Jiangsu Province’s “333 High-Level Talent Cultivation Program.” He previously served as the Vice Dean of the School of Chemistry and Materials Engineering at Jiangnan University (2007–2013), a member of the Teaching Steering Committee for Chemistry under the Ministry of Education (2013–2017), and the academic leader of the Inorganic Acids, Bases, and Salts Professional Committee of the Chinese Chemical Society (2012–2016). His research focuses on the synthesis and application of novel metal-organic compounds and advanced electronic materials. He has published over 70 research papers in internationally renowned journals and has filed more than 20 invention patent applications.
Report Title: Design and Synthesis of Atomic Layer Deposition Aluminum Precursors
Report Overview:
In atomic layer deposition (ALD) technology, the properties of precursors—such as thermal stability, volatility, and resistance to decomposition—are critically important. Among these, the stability of aluminum precursors has long been a significant challenge in the semiconductor industry, thereby limiting the advancement of this technological field.
This paper reports the synthesis of a series of novel atomic layer deposition aluminum precursors using aminopyridine and its derivatives as raw materials, in combination with aluminanes. The prepared aluminum precursors were compared with trimethylaluminum amide (TMAA), dimethylethylaluminum amide (DMEAA), and dimethylhydrogenaluminum (DMAH).
The research results indicate that the novel aluminum precursor, under certain conditions, can form a dimeric compound with higher stability and lower volatility (in the frozen state), which facilitates storage, transportation, and subsequent use. Moreover, when the temperature rises, this compound can be transformed into a precursor with higher volatility and greater resistance to decomposition (in the thawed state).
Such aluminum precursors can be used via ALD technology to prepare metallic thin films, aluminum-containing oxide thin films, aluminum-containing nitride thin films, and aluminum-containing alloy thin films, making them potentially important aluminum precursors.
Ding Yuqiang (right)
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