Invited speaker Gan Yang
Professor, Doctoral Supervisor, and Head of the Department, School of Chemical Engineering, Harbin Institute of Technology
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2015
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Gan Yang is a professor, doctoral supervisor, and head of the Department at the School of Chemical Engineering, Harbin Institute of Technology. His research focuses on the surface and interface properties of inorganic crystalline materials and nanomaterials. He excels in using techniques such as scanning probe microscopy to characterize, control, and study defects on material surfaces. He teaches courses—including “Surface and Interface Forces” and “Graduate Academic Paper Writing”—that have received high praise from students. He has published nearly 50 papers, including four cover articles, which have been cited over 600 times; two of his papers have been cited more than 100 times by other researchers (according to Google Scholar data). He has also been invited to write review articles for several journals, including Surf. Sci. Rep. In 2003, his paper on STM tip-induced exfoliation of graphene was cited by Professor Geim, the 2010 Nobel laureate, in his Nobel lecture. In 2013, he received the first-ever Frans Habraken Best Paper Award from Elsevier (for his research on the characterization of sapphire cleaning processes). In 2009, he was awarded the First Prize in Natural Sciences by Heilongjiang Province for his research on the preparation and characterization of functional nanomaterials. Currently, he serves as an editorial board member for three SCI journals, including Scientific Reports, and is a director of the New Chemical Materials Committee of the Chinese Chemical Society, as well as a core member of the SEMI China HB-LED Standards Technical Committee.
Report Title: AFM Characterization of Nanotribological Properties in Plasma Etching and Polishing Processes of Sapphire and Silicon Carbide Single Crystals
Report Overview:
A deep understanding of the surface plasma treatment mechanisms and material removal mechanisms of sapphire and SiC single crystals is of great significance for the advancement of high-brightness LEDs and power semiconductor technologies. However, currently, our understanding of the microscopic evolution of single-crystal surface structures during plasma etching remains insufficient, and there is also a lack of in-depth research on the interaction mechanisms between abrasives and surfaces as well as the abrasive consumption process in CMP machining.
Using atomic force microscopy (AFM), we investigated the effect of plasma treatment on the evolution of nanoscale “step-platform” structures on single-crystal surfaces. For the first time, we observed several novel phenomena, including changes in the width of initially equally spaced steps, coarsening of etching on both steps and platforms, and even the disappearance of steps. Furthermore, by combining AFM with microsphere probe technology, we conducted an in-depth study of the nanotribological behavior of silica microspheres (used as model CMP abrasives) on sapphire and SiC surfaces. Through experimental and theoretical investigations into the morphological evolution of microsphere wear and its impact on nanoadhesion forces, we revealed the underlying mechanisms by which the nanoscale topography of abrasive surfaces influences van der Waals forces and capillary forces acting on the surface.
The above results hold significant guiding importance for controlling the surface plasma etching process and CMP material removal of sapphire and SiC single crystals at the microscale.
Gan Yang (right)
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