Invited speaker: Dr. Mikhail R. Baklanov
North China University of Technology, China
Category:
2016
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Mikhail R. Baklanov received his PhD degree of Candidate of Chemical Science in 1977. He joined the Institute of Semiconductor Physics (ISP) as an research scientist (1974-1980), an Senior scientist (1980-1990) and the the head of Laboratory (1990-1995). He joined IMEC, Belgium as a Visiting Professor in 1995 and is a Principal Scientist since 2003. He is also a Visiting Professor of Moscow Institute of Physics and Technology (MIPT) since 2015. He is a contributor of low-k/barrier parts of International Technology Roadmap for Semiconductors (ITRS) and a member of Board of Directors of Leuven Instruments since 2015.
More than 600 publications (including over 230 papers in peer-reviewed journals), over 30 granted patents, and over 60 invited presentations at international conferences; editor and contributor to several books. Three patents are related to ellipsometric porosimetry (EP). The EP system is currently under industrial production by Company “Semilab” and has become a standard tool for evaluating nanoporous low-k films developed for nanoelectronics. Four patents are associated with damage-free cryogenic etching, enabling the achievement of the lowest integrated k-value in ultralow-k materials.
Topic: Challenges in the Implementation of Low-k Dielectrics in Advanced ULSI Interconnects
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