Low-temperature Fourier transform infrared spectrometer
Category:
Joint Analysis, Testing, and Technology Cooperation Service Platform
Testing instrument
Silicon Material Testing Instrument
Product accessories:
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Product Description
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Instrument and Equipment Information |
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Instrument Name |
Low-temperature Fourier transform infrared spectrometer |
Instrument model |
CryoSAS |
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LT-FTIR |
Place of origin and manufacturer |
Brook |
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Affiliated Unit |
Jiangsu Xinhua Semiconductor Materials Technology Co., Ltd. |
Acquisition time |
November 2019 |
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Placement location |
No. 66, Yangshan Road, Xuzhou Development Zone |
Instrument Status |
Normal |
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Device application range / Instrument measurement range (tolerance) |
CryoSAS is suitable for the analysis of impurity element concentrations—including B, P, As, Al, Sb, Ga, C, and O—in single-crystal silicon samples. It is a fully integrated cryogenic detection system recently developed by Bruker Optics specifically for the analysis of silicon materials. It can analyze: - Analysis of the concentrations of Group III and Group V dopant elements (such as boron and phosphorus—shallow impurity states) in monocrystalline silicon, compliant with SEMI MF1630-0704 standard. Detection limits: as low as parts per trillion (ppta)—B: 30 ppta; P: 10 ppta. Relative average deviation for repeatability: <5%. - Analysis of carbon substitution content in silicon, compliant with SEMI MF1391-0704 standard requirements; detection limit: on the order of parts per billion (ppb); C: 25 ppb; relative average deviation for repeatability: <3%. - Analysis of the content of interstitial oxygen in silicon complies with the requirements of SEMI F1188-93a standard. Detection limit: on the order of parts per billion (ppba); O: 10 ppba; relative average deviation for repeatability: <3%. |
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Whether it is regularly calibrated by a third-party agency |
Yes |
CNAS certification obtained. |
No |
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