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Chongqing Chao Silicon Semiconductor Co., Ltd.

Chongqing Advanced Silicon Technology Co., Ltd.

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Product Description

Product Category Secondary Category Product Name Image introduction Manufacturer Product Features
Substrate material Polished silicon wafer 200mm diameter polished silicon wafer (8")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>, <111>, <110>, <112>;
Dopant: B, P, As, Sb, Red-ph;
Resistivity: heavily doped, lightly doped, high resistivity, etc.;
Thickness: 725 ± 25 μm;
TTV: ≤10 μm;
Particle: <20, @0.2μm.
Substrate material Argon annealing sheet 200mm diameter argon annealing wafer (8")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>, <111>, <110>, <112>;
Dopant: B, P, As, Sb, Red-ph;
Resistivity: heavily doped, lightly doped, high resistivity, etc.;
Thickness: 725 ± 25 μm;
TTV: ≤10 μm;
Particle: <20, @0.2μm.
Substrate material High-resistance sheet 200mm diameter high-resistance wafer (8")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>, <111>, <110>, <112>;
Dopant: B, P, As, Sb, Red-ph;
Thickness: 725 ± 25 μm;
TTV: ≤10 μm;
Particle: <20, @0.2μm.
Substrate material Epitaxial wafer 200mm diameter epitaxial wafer (8")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>, <111>, <110>, <112>;
Dopant: B, P, As, Sb, Red-ph;
Thickness: 725 ± 25 μm;
TTV: ≤10 μm;
Particle: <20, @0.2μm.
Substrate material Low-Cop film 200mm Diameter Low-COP Sheet (8")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>, <111>, <110>, <112>;
Dopant: B, P, As, Sb, Red-ph;
Resistivity: heavily doped, lightly doped, high resistivity, etc.;
Thickness: 725 ± 25 μm;
TTV: ≤10 μm;
Particle: <20, @0.2μm.
Substrate material Cop-Free film 200mm Diameter COP-Free Wafer (8")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>, <111>, <110>, <112>;
Dopant: B, P, As, Sb, Red-ph;
Resistivity: heavily doped, lightly doped, high resistivity, etc.;
Thickness: 725 ± 25 μm;
TTV: ≤10 μm;
Particle: <20, @0.2μm.
Substrate material Polished silicon wafer 300mm diameter polished silicon wafer (12")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>;
Dopant: B, P;
Resistivity: lightly doped, heavily doped, high resistivity;
Thickness: 775 ± 25 μm;
TTV: GBIR < 8 μm;
Particle: <100, @0.12μm.
Substrate material Epitaxial wafer 300mm diameter epitaxial wafer (12")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>;
Dopant: B, P;
Resistivity: lightly doped, heavily doped, high resistivity;
Thickness: 775 ± 25 μm;
TTV: GBIR < 8 μm;
Particle: <100, @0.12μm.
Substrate material Argon annealing sheet 300mm diameter argon annealing sheet (12")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>;
Dopant: B, P;
Resistivity: lightly doped, heavily doped;
Thickness: 775 ± 25 μm;
TTV: GBIR < 8 μm;
Particle: <100, @0.12μm.
Substrate material High-resistance sheet 300mm diameter high-resistance wafer (12")   Chongqing Chao Silicon Semiconductor Co., Ltd. Type: N, P;
Orientation: <100>;
Dopant: B, P;
Thickness: 775 ± 25 μm;
TTV: GBIR < 8 μm;
Particle: <100, @0.12μm.

 

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