Phosphoric acid (H3PO4, 86% concentration)
Recommendation rating: ★★★★★ Hubei Xingfu Electronic Materials Co., Ltd.
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Process chemicals
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Product Description
The key chemicals used in wet etching can remove the silicon nitride film through chemical reactions, ensuring that the protective layer on the substrate surface is completely removed while maintaining the integrity of the substrate material. Metal ion concentration: less than 50 ppb; particle size: 0.5 μm—less than 20 particles, 0.3 μm—less than 50 particles, 0.2 μm—less than 200 particles.
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