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Preparation and properties of supersaturated sulfur doped silicon materials
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Preparation and properties of supersaturated sulfur doped silicon materials
Release time：
2015-07-23 11:51
Abstract:
Keywords: supersaturated doping; positron annihilation technique; pulsed laser; infrared enhanced absorption In this paper, supersaturated sulfur-doped silicon materials were prepared by pulsed laser
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Field Emission Properties of ZnO/Si-NPA
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Field Emission Properties of ZnO/Si-NPA
Release time：
2015-07-23 11:58
Abstract:
关键字：硅纳米孔柱阵列(Si-NPA);硫化锌(ZnS);场发射　　为了研究衬底形貌对冷阴极场发射性能的影响，分别以具有柱状和火山口状形貌特征的硅纳米孔柱阵列(Si-NPA)为衬底，采用化学水浴(CBD)法制备了硫化锌(ZnS)/Si-NPA，并通过对比两样品的发射性能，研究了Si-NPA衬底形貌对其场发射性能的影响。结果表明，相对于ZnO纳米棒簇状阵列，ZnO纳米针簇状阵列具有更低的开启场强，更
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Determination of the isothermal section of the Ag-Cu-Sn ternary system rich in Ag-Cu region at 450 °C
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Determination of the isothermal section of the Ag-Cu-Sn ternary system rich in Ag-Cu region at 450 °C
Release time：
2015-07-23 11:59
Abstract:
Key words: Ag-Cu-Sn ternary diffusion diffractogram electron probe Ag-Cu-Sn medium temperature solder is widely used in the field of electronic packaging due to its excellent temperature resistance,
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Organic/inorganic alternating structure film process and control for organic device packaging
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Organic/inorganic alternating structure film process and control for organic device packaging
Release time：
2015-07-23 01:20
Abstract:
Keywords: organic electronic device package, PECVD, organic/inorganic alternating structure film, water oxygen barrier performance Organic electronic devices have developed rapidly in recent years an
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Acquisition of high quality silicon-based gallium arsenide materials
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Acquisition of high quality silicon-based gallium arsenide materials
Release time：
2015-07-23 01:21
Abstract:
Keywords: silicon gallium arsenide, germanium surface, MOCVD, defect density, roughness Silicon devices and III-V devices are the two camps of semiconductor devices. In order to achieve the complemen
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