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C-MRS Conference Report

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Research on quantum well laser for gas sensing
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Release time:
2017-11-01 16:37
Abstract:
In the early 1980s, literature on the measurement of gas concentrations based on laser diode absorption spectroscopy (TDLAS) has emerged. Because TDLAS technology has significant technical advantages
Research on XOI Heterogeneous Integrated Materials for the Post-Moore Age
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Abstract:
In the future, microelectronics, optoelectronic devices and intelligent microsystems will continue to develop along the miniaturization, integration and intelligence, and the required microsystem chip
Telluride narrow bandgap semiconductor infrared photoelectric material and device
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Abstract:
锑化物半导体主要指包括GaSb、AlSb、InAs等晶格常数在0.61nm附近的化合物及其各种多元合金。该体系中的InAs/GaSb超晶格是II型能带结构,能有效抑止俄歇复合,其光电探测响应波段覆盖2~30μm的超宽红外区域;InGaAsSb量子阱是I型能带,在发展2-4微米波段大功率和窄线宽激光器方面前景重大;其调制掺杂异质结具有室温超高迁移率特性,非常适合制造低功耗高速微电子学器件。近年来,随
Semiconductor optoelectronic materials - from 3D to 0D, from classic applications to quantum information
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Abstract:
This work is aimed at the new generation of optoelectronic information systems, the development of new semiconductor optoelectronic functional materials preparation technology, to meet the needs of hi
Phase change memory chip manufacturing
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Release time:
2017-11-01 16:34
Abstract:
近年来,相变存储技术在学术界与工业界研究人员的共同努力下,已经由理论模型变成了真实产品。经过了几十年的发展,PCRAM已成为下一代非易失性存储技术的最佳解决方案,有望代替DRAM+Flash的存储模式,在高速、海量存储方面具有巨大的潜力。本文介绍了相变存储器的发展历程与发展趋势,重点介绍中国科学院上海微系统所与中芯国际集成电路有限公司在相变存储器新材料开发和工艺集成研究成果。
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