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All companies in the column are rated A class in preliminary -evaluation of suppliers and their products are applied in batch in production lines of 8-inch and above integrated circuits. 

Criteria of rating: The rating is made according to the evaluation grade of corporate suppliers, batch production and application scope in technical nodes and others. For more details, please contact the Secretariat. 

H3PO4

Thekeychemicalsinwetetchingcanremovethesiliconnitridefilmbychemicalreaction,andachievetherequirementsofgoodstrippingandsubstrateintegrityofthesubstratesurfaceprotectivelayer.Metalions<50ppb,particles:

Sulfuric acid (H2SO4, 96% concentration)

It can be used to remove metal and organic matter on the surface of silicon wafer, and also can be used for wet etching and final degumming in photolithography. metal ion <50ppt,particle:0.5um<10、0.3um<20、0.2um<100。

Hubei Xingfu Electronic Materials Co., Ltd

Aluminum etching solution

Aluminum etching solution is composed of several acids mixed according to different ratios, which is the key material of wet etching process to remove Mo Al metal layer on thin film by chemical reaction. Metal ions < 100 ppb.



Hubei Xingfu Electronic Materials Co., Ltd

Tetramethylammonium hydroxide (TMAH, 25% concentration)

Electron grade tetramethylammonium hydroxide has strong alkalinity. 25% aqueous solution is called alkaline developer. It is mainly used to neutralize and peel off organic acids formed after photoresist exposure, leaving unreacted photoresist pattern. Metal ions < 5ppb.



Hubei Xingfu Electronic Materials Co., Ltd

Stripping solution

Stripping solution is composed of several organic solvents mixed according to different ratios, mainly to remove the complete photoresist of etching, so that the pattern protected by photoresist appears. Metal ions < 100 ppb.



Hubei Xingfu Electronic Materials Co., Ltd

Copper / barrier layer chemical mechanical polishing fluid series

Product features: Copper polishing liquid: high grinding rate (0.5-1 μ M / min), high dilution ratio (> = 10x) barrier layer polishing liquid: high grinding rate (0.1 μ M / min), adjustable selection ratio



Anji Microelectronics (Shanghai) Co., Ltd

Silicon chemical mechanical polishing fluid series

Product features: rough polishing liquid: high grinding rate (1-2 μ M / min), high dilution ratio (1:20-1:40); fine polishing liquid: ultra-low surface defects, ultra-low surface roughness, high dilution ratio (1:10-1:20)



Anji Microelectronics (Shanghai) Co., Ltd

Silicon dioxide chemical mechanical polishing fluid series

Product features: a full range of silica particles selection (sintered and colloidal), defect enhancement



Anji Microelectronics (Shanghai) Co., Ltd

Ceria chemical mechanical polishing fluid series

Product features: high grinding rate (> 0.6 μ M / min), diluble (> = 4x), high o / N selection ratio (> = 150)



Anji Microelectronics (Shanghai) Co., Ltd

Tungsten chemical mechanical polishing fluid series

Product features: wide grinding speed range (0.2-1 μ M / min), high dilution ratio (> = 10x), low defects
Anji Microelectronics (Shanghai) Co., Ltd

200 mm diameter epitaxial wafer (8 ")

Product features: uniformity of electrical parameters, surface quality, cleanliness, physical and geometric parameters and stability between batches of products have reached the international advanced level
Nanjing Guosheng Electronics Co., Ltd

Al and its alloy targets for 300 mm silicon wafer process

Recommended index:★★★★★
Hubei Xingfu Electronic Materials Co., Ltd
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