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Branch Chair Wang Xi

Director of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

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2015

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　　The invited keynote speaker is a male academician of the Chinese Academy of Sciences, doctoral supervisor, director of the Shanghai Institute of Microsystem and Information Technology of the CAS, and an academic leader in the field of SOI. He graduated from Tsinghua University in 1987 and obtained his Ph.D. degree from the Shanghai Institute of Metallurgy of the CAS in 1993. In 1994, he joined the Commonwealth Scientific and Industrial Research Organisation in Australia. In 1996, he spent two years as a Humboldt Fellow at the Forschungszentrum Rossendorf in Germany. In 1998, he returned to China and was promoted to researcher and doctoral supervisor at the Shanghai Institute of Microsystem and Information Technology of the CAS. Over the years, he has served as laboratory director, assistant director of the institute, deputy director, deputy secretary of the Party committee, secretary of the Party committee, and director of the institute. For many years, he has been dedicated to the study of physical phenomena associated with the interaction between energetic particle beams and solids. He has elucidated the microstructural, phase-compositional, and electronic properties of thin-film surfaces under the action of energetic ions, achieved controllable growth of thin films by energetic ion beams, and applied these research findings to the development of silicon-on-insulator (SOI) technology for advanced electronic materials. Leading his team, he has conducted in-depth studies on the physical and chemical processes involved in the SOI ion-implantation synthesis process, developed key technologies for large-scale SOI production with independent intellectual property rights, and founded Shanghai Xin'ao Technology Co., Ltd.—China’s first production base for next-generation silicon-based integrated circuit materials, SOI. Today, Shanghai Xin'ao has become one of only a few companies worldwide capable of providing commercial SOI wafers. In addition to SOI materials, he has also been engaged in research on next-generation silicon-based high-mobility materials such as strained silicon, technologies for integrating silicon with compound semiconductors, silicon-based GaN microelectronics and optoelectronics applications, as well as the development of integrated circuit fabrication processes including ion implantation and material bonding. He has published over 300 papers in major domestic and international academic journals and conferences, and has filed 45 national invention patent applications, 22 of which have been granted. As the primary contributor, he received the First Prize for Scientific and Technological Progress of Shanghai Municipality in 2005, the First Prize for National Scientific and Technological Progress in 2006, the Outstanding Scientific and Technological Achievement Award of the Chinese Academy of Sciences in 2007, and the Ho Leung Ho Lee Foundation Science and Technology Progress Award in 2008. He has mentored nearly 30 graduate students, among whom one has received the Special Award of the CAS President’s Scholarship. Currently, he concurrently serves as the Deputy Head of the Overall Expert Group for the national medium- and long-term science and technology plan’s major special project titled “Manufacturing Equipment and Complete Processes for Ultra-Large-Scale Integrated Circuits.” He has also been appointed as a scientific member of the International Bohmische Physical Society and a member of the International Committee of the International Conference Series on Ion Beam Surface Modification.

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