Focused Ion Beam Scanning Electron Microscope
Category:
Joint Analysis, Testing, and Technology Cooperation Service Platform
Testing instrument
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Product Description
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Instrument and Equipment Information |
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Instrument Name |
Focused Ion Beam Scanning Electron Microscope |
Instrument model |
GAIA3 XMH |
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FIB-SEM |
Place of origin and manufacturer |
Tescan |
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Affiliated Unit |
Shanghai Xinyang Semiconductor Materials Co., Ltd. |
Acquisition time |
September 2018 |
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Placement location |
No. 3600, Sixian Road, Songjiang District, Shanghai City |
Instrument Status |
Normal |
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Device application range / Instrument measurement range (tolerance) |
Main applications: 1. Used for imaging various materials, analyzing plating process nodes, and verifying cleaning effectiveness. 2. Studying corrosion growth mechanisms using secondary ion imaging; 3. Perform etching and coating of fine, specialized structures. Instrument features: 1. Achieves ultra-high nanometer resolution of 0.7 nm at 15 keV and 1 nm at 1 keV; 2. The extended low-vacuum mode enables sample vacuum levels as low as 500 Pa, making it suitable for observing non-conductive samples. 3. FIB’s best resolution < 2.5 nm; 4. The FIB’s Cobra optical system, equipped with a Ga ion source, can provide an ion beam current ranging from 1 pA to 50 nA. |
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Whether it is regularly calibrated by a third-party agency |
No |
CNAS certification obtained. |
No |
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