Branch Chair Wang Xi

Director of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

Category:

2016

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Product Description

　　Male, Academician of the Chinese Academy of Sciences, doctoral supervisor, Director of the Shanghai Institute of Microsystem and Information Technology, CAS, and academic leader in the SOI field. He graduated from Tsinghua University in 1987 and obtained his Ph.D. degree from the Shanghai Institute of Metallurgy, CAS, in 1993. In 1994, he went to work at the Commonwealth Scientific and Industrial Research Organisation in Australia. In 1996, he served as a Humboldt Fellow at the Rossendorf Research Center in Germany for two years. In 1998, he returned to China and was promoted to Researcher and doctoral supervisor at the Shanghai Institute of Microsystem and Information Technology, CAS. Over the years, he has held positions including Laboratory Director, Assistant Director, Deputy Director, Deputy Secretary of the Party Committee, Secretary of the Party Committee, and Director. For many years, he has been dedicated to the study of physical phenomena related to the interaction between energetic particle beams and solids, revealing the microstructural, phase-compositional, and electronic properties of thin-film surfaces under the action of energetic ions. He has achieved controllable growth of thin films using energetic ion beams and applied these research findings to the development of silicon-on-insulator (SOI) technology—a cutting-edge electronic material used as an insulating layer on advanced electronic devices. Leading his team, he has conducted in-depth research into the physical and chemical processes involved in the SOI ion-implantation synthesis process, developing key technologies for large-scale SOI production with independent intellectual property rights. He founded Shanghai Xin'ao Technology Co., Ltd.—China’s first large-scale production base for next-generation silicon-based integrated circuit materials, SOI—and has become one of only a few global companies capable of supplying commercial SOI wafers. In addition to SOI materials, he is also engaged in research on next-generation silicon-based high-mobility materials such as strained silicon, silicon-compound semiconductor integration technologies, silicon-based GaN microelectronics and optoelectronics applications, as well as the development of integrated circuit fabrication processes including ion implantation and material bonding. He has published over 300 papers in major domestic and international academic journals and conferences, and has filed 45 national invention patent applications, 22 of which have been granted. As the primary contributor, he received the First Prize for Shanghai Science and Technology Progress in 2005, the First Prize for National Science and Technology Progress in 2006, the Outstanding Scientific and Technological Achievement Award of the Chinese Academy of Sciences in 2007, and the Ho Leung Ho Lee Foundation Science and Technology Progress Award in 2008. He has mentored nearly 30 graduate students, one of whom received the Special Award of the CAS President’s Scholarship. Currently, he concurrently serves as the Deputy Head of the Overall Expert Group for the National Medium- and Long-Term Science and Technology Plan’s Major Special Project on “Extreme-Scale Integrated Circuit Manufacturing Equipment and Complete Process Technologies.” He has been appointed as a Scientific Member of the International Bohmische Physical Society and a member of the International Committee of the International Conference Series on Ion Beam Surface Modification.

Vice Chairman Zhao Chao

None

Materials Alliance

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