Zhonghuan Leading Semiconductor Materials Co., Ltd.
Tianjin Zhonghuan Semiconductor Co., Ltd.
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Materials company
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Product Description
| Product Category | Secondary Category | Product Name | Image introduction | Manufacturer | Product Features |
| Substrate material | Silicon polished wafers | 200mm diameter silicon polished wafer (8") |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | This product is an 8-inch, 200-mm-diameter single-crystal silicon wafer for semiconductor applications. It is available in three types: Czochralski lightly doped, Czochralski heavily doped, and zone-melted products. Doping agents include As, P, B, and Sb. The resistivity ranges from 0.0005 to 8,000 ohm-cm. Both single-polished and double-polished wafers are available. |
| Substrate material | Silicon polished wafers | 150mm diameter silicon polished wafer (6") |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | This product is a single-crystal silicon wafer made of semiconductor silicon material, with a diameter of 150 mm and a thickness of 6 inches. It is available in three types: Czochralski lightly doped, Czochralski heavily doped, and zone-melted products. Doping agents include As, Ph, B, and Sb. The product can be supplied either as single-polished wafers or double-polished wafers. |
| Substrate material | Silicon polished wafers | Silicon polished wafers with a diameter of 125 mm or less (5" and under) |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | This product encompasses semiconductor silicon wafers made from single-crystal silicon materials with diameters of 125 mm or less, intended for devices 5 inches and smaller. The wafers are categorized into three types: Czochralski lightly doped, Czochralski heavily doped, and zone-melted wafers. Doping agents include As, P, B, and Sb. Both single-polished and double-polished wafers are available. |
| Substrate material | Zone-melted silicon single crystal | Zone-melted silicon single crystal |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | Single-crystal ingot grown by the zone-melting method |
| Substrate material | Zone-melted silicon single crystal | Zone-melt silicon wafers |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | This product is an 8-inch, 200-mm-diameter single-crystal silicon wafer for semiconductor applications. The single crystal is grown using the zone-melting method. We offer two types of wafers: single-polished and double-polished, with resistivity ranges spanning from 1 to 8,000 ohm-cm. |
| Substrate material | Czochralski-grown silicon single crystal | Czochralski-grown silicon single crystal |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | Single-crystal ingot grown by the Czochralski method |
| Substrate material | Czochralski-grown silicon single crystal | Czochralski silicon wafers |
|
Tianjin Zhonghuan Leading Materials Technology Co., Ltd. | This product is an 8-inch, 200-mm-diameter single-crystal silicon wafer for semiconductor applications. The single crystals are grown using the Czochralski method and are available in two types: lightly doped CZ and heavily doped CZ. Dopants include As, Ph, B, and Sb. The resistivity range of these wafers is between 0.0005 and 100 ohm-cm. Both single-polished and double-polished wafers are available. |
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