Zhonghuan Shares successfully passed the acceptance inspection of the “National Key Science and Technology Special Project” No. 02.

Recently, the Implementation and Management Office of the National Key Science and Technology Major Project “Manufacturing Equipment and Complete Process Technologies for Ultra-Large-Scale Integrated Circuits” (Project 02) organized an expert panel at Zhonghuan Shares to conduct the acceptance review of the project titled “Industrialization Technology for Zone-Melting Silicon Single Crystals and Development of Domestically Produced Equipment.” The experts participating in the project acceptance review posed for a group photo with representatives from the undertaking unit. The expert panel for this acceptance meeting was composed of members from the Advisory Committee of the National Key Science and Technology Major Project, senior technical experts from the industry, intellectual property specialists, and financial experts. During the acceptance meeting, the experts listened to the completion report submitted by Tianjin Huan’ou Semiconductor Materials Technology Co., Ltd., as well as the acceptance test report prepared by the on-site testing team, and reviewed the acceptance documents.

Recently, the Implementation and Management Office of the National Key Science and Technology Special Project “Manufacturing Equipment and Complete Process Technologies for Ultra-Large-Scale Integrated Circuits” (Project 02) organized an expert panel at Zhonghuan Shares to conduct acceptance testing of the project “Industrialization Technology for Zone-Melting Silicon Single Crystals and Development of Domestically Produced Equipment.”

A group photo of the project acceptance experts and representatives from the undertaking unit.

The expert panel for this acceptance meeting was composed of experts from the National Major Science and Technology Special Project Advisory Committee, senior technical experts from the industry, intellectual property experts, and financial experts. At the acceptance meeting, the experts listened to the project completion report submitted by Tianjin Huan'ou Semiconductor Materials Technology Co., Ltd. and the acceptance test report prepared by the on-site testing team. They also reviewed the acceptance documentation and conducted an on-site inspection. After questioning, discussion, and individual scoring by the expert panel, it was determined that the project had successfully met all the performance indicators stipulated in the contract. The acceptance expert panel unanimously agreed that the project had passed the acceptance test.

Project Acceptance Report Presentation Site

Through the implementation of this project, a domestically produced IGBT industrial chain has been established, covering everything from zone-melting equipment manufacturing and single-crystal preparation to silicon wafer processing and IGBT design and fabrication. Among these efforts, the projects undertaken by Zhonghuan Shares and its subsidiaries have resulted in 48 national patents. A demonstration base for the industrial-scale production of zone-melt silicon single crystals for IGBTs has been built, with an annual production capacity of 36 tons of zone-melt silicon single crystals and silicon wafers. The base now has the capability to produce 80,000 polished wafers per month for 6-inch IGBT devices and 50,000 polished wafers per month for 8-inch IGBT devices. The products have been certified by well-known semiconductor companies both domestically and internationally, achieving product quality that meets advanced international standards. Furthermore, the company has begun exporting polished wafers made from zone-melt silicon single crystals, becoming the world’s third-largest and China’s first company capable of mass-producing 8-inch zone-melt silicon polished wafers.

Upon completion of this project, we will break the foreign monopoly on large-diameter 8-inch zone-melt silicon single crystals and equipment markets, as well as the monopoly on key materials used in the manufacture of large-diameter IGBT devices. This will help China establish a complete IGBT industry chain—from raw materials and equipment to device production—enhance the overall level of semiconductor equipment and technology in China, and accelerate the development of China’s integrated circuit industry.

During the 13th Five-Year Plan period, Zhonghuan Shares will closely follow the nation’s integrated circuit industry development strategy. Leveraging its years of accumulated semiconductor technology expertise and its status as a publicly listed company with access to financing platforms, the company will focus on the R&D and industrialization of large-diameter silicon wafers ranging from 8 to 12 inches. By seizing this critical strategic opportunity and challenging period in China’s integrated circuit industry development, Zhonghuan Shares aims to enhance its competitiveness in future markets, contribute to elevating China’s overall equipment and process levels in the semiconductor sector, accelerate the development of China’s integrated circuit industry, and play its part in realizing the “Made in China 2025” initiative.

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