The “Intelligent Storage for the Future” Advanced Storage Collaborative Innovation Forum and High-Quality Development Exchange Meeting for the Advanced Storage Supply Chain were successfully held.

On November 19, 2024, the “Intelligent Storage for the Future” Advanced Storage Collaborative Innovation Forum and the High-Quality Development Exchange Meeting for the Advanced Storage Supply Chain were successfully held in Beijing. As one of the thematic forums of the World Integrated Circuit Conference, the “Intelligent Storage for the Future” Advanced Storage Collaborative Innovation Forum was jointly organized under the guidance of the China Semiconductor Industry Association by the Semiconductor Supporting Industries Branch of the China Semiconductor Industry Association (hereinafter referred to as the “Branch”), the Integrated Circuit Materials Industry Technology Innovation Alliance (hereinafter referred to as the “Materials Alliance”), Changxin Technology Group Co., Ltd. (hereinafter referred to as “Changxin Technology”), and the Beijing Superstring Memory Research Institute. With the theme “Intelligent Storage for the Future,” the forum focused on strengthening collaborative innovation in advanced storage technologies within China’s integrated circuit industry.

The scene of the “Intelligent Storage for the Future” Advanced Storage Collaborative Innovation Forum

Wang Junjie, Executive Secretary-General of the China Semiconductor Industry Association, attended the meeting and delivered a speech. The supply chain team from Changxin Technology also participated in the meeting. A total of approximately 260 people, including members of the Supporting Industries Branch, members of the Materials Alliance, and representatives from research institutes, took part in the forum.

In his speech, Secretary-General Wang Junjie stated that we are living in an era of explosive data growth. Data storage serves as the driving force behind transformation and innovation across all industries, and it is a crucial cornerstone for advancing toward digitalization and intelligence. Intelligent technologies enable storage solutions to better meet the demands of complex application scenarios, thereby enhancing data storage efficiency and retrieval speed. He particularly emphasized the importance of collaborative innovation: in the context of deep, cross-disciplinary technological integration, major breakthroughs in technology require close cooperation among industry, academia, research institutions, and end-users. Secretary-General Wang expressed his hope that today’s in-depth discussions on collaborative innovation will help chart a grand blueprint brimming with infinite possibilities for the future of the storage industry—ensuring that storage technologies continue to empower social progress and economic development.

Secretary-General Wang Junjie delivers a speech at the scene.

In his report, “Collaborative Innovation Leading the Transformation of the Integrated Circuit Industry,” Xin Tiejun, Head of Industrial Synergy and Innovation at Changxin Technology Group Co., Ltd., specifically introduced Changxin’s case studies in supply-chain collaborative innovation—covering areas such as production and manufacturing technologies and DRAM architecture—and highlighted both the challenges and opportunities that China’s domestic industry will face. He proposed that collaborative innovation in integrated circuit manufacturing should be application-driven, fostering multi-dimensional synergy among materials, equipment, and structures, placing strong emphasis on fundamental research, and thus establishing a new model that leads the overall development of the industrial chain.

Mr. Xin Tiejun reports from the scene

Zhao Chao, Executive Vice President of the Superstring Research Institute, delivered a report titled “Current Status and Prospects of DRAM Manufacturing Technology Development.” He pointed out that DRAM is an indispensable and critical component of the von Neumann architecture. As the single integrated circuit product with the largest market share, DRAM manufacturing technology has undergone more than 50 years of development. The evolution of traditional 2D1T1C DRAM manufacturing technology is now facing a series of challenges, while innovative solutions tailored for future generations of DRAM technology continue to emerge. The report summarized the historical development of DRAM devices, architectures, and manufacturing processes over the past 50 years; introduced the key technical challenges currently confronting DRAM manufacturing technology in the present generation, including critical issues related to patterning, unit transistor fabrication, unit capacitor fabrication, and peripheral circuit transistor manufacturing; analyzed potential future development paths; and provided a brief overview of R&D progress in areas such as VCT 4F2 DRAM, silicon-based 3D horizontal-stacked DRAM, and IGZO 3D DRAM.

Dean Zhao Chao at the reporting site

Wang Na, Vice President of the Strategic Development System at Beijing North Huachuang Microelectronics Equipment Co., Ltd., delivered a report titled “Using Equipment Innovation to Propel the Takeoff of the Storage and Packaging Industry in the Era of Computing Power.” She stated: The rapid advancement of artificial intelligence technology has led to a sustained increase in demand for high-bandwidth memory. As AI applications become increasingly widespread, the demand for related chips will continue to soar, presenting unprecedented growth opportunities for the semiconductor market and accelerating the pace of semiconductor technology evolution. As a leading domestic manufacturer and service provider of semiconductor equipment, North Huachuang continuously drives the iterative application of domestically produced equipment in the era of computing power through ongoing independent R&D and innovation. We offer comprehensive solutions—including etching, thin-film deposition, furnace tube processing, and cleaning equipment—for key process steps in storage and packaging. North Huachuang remains firmly customer-driven, continuously innovating to develop more efficient solutions and promoting the sustainable development of the industry.

Vice President Wang Na’s on-site report

The presentation by Mr. Zhang Qingsheng, a specialist in ultrapure water technology at Hangzhou Kebote Filtration Equipment Co., Ltd., was titled “Collaborative Innovation Breakthroughs in Ultrapure Water System Solutions.” Starting with case studies of collaborative innovation across the industrial chain for ultrapure water system solutions, the presentation highlighted the challenges faced in localizing semiconductor ultrapure water systems and introduced Kebote’s unique ultrapure water system solutions, thereby providing new directions for the development of ultrapure water systems.

Mr. Zhang Qingsheng’s report on-site

At the subsequent press conference on collaborative innovation in materials enterprises, expert representatives from Jiangsu Nanda Optoelectronic Materials Co., Ltd., Ruijing Semiconductor Co., Ltd., China Shipbuilding (Handan) Perry Special Gases Co., Ltd., Anhui Yagesheng Electronic New Materials Co., Ltd., Hefei Andekeming Semiconductor Technology Co., Ltd., and Xingqi (Shanghai) Semiconductor Co., Ltd. each shared outstanding examples of collaborative innovation across the upstream and downstream sectors of the domestic integrated circuit industry. These cases have provided new insights for the development of China’s integrated circuit industry, and their success has inspired their domestic peers in attendance.

Nanjing University Optoelectronics Releases On-site

Ruijing Semiconductor releases on-site

CSSC Special Gases Releases On-site Statement

Yage Sheng Release Event

Andeco Ming Release Event

Debang Technology releases on-site

Xingqi Semiconductor Launches On-Site

The Materials Alliance conducted a briefing on the revision of the 2024 edition of the group standard, “Quality Evaluation Indicators for Integrated Circuit Material Suppliers,” at the site. This standard aims to promptly enhance the supplier management capabilities of material companies and raw material suppliers and to explore new pathways for mutual recognition of audits.

On-site promotion of the Material Alliance Group Standard

That afternoon, the Materials Alliance concurrently held a high-quality development exchange meeting on the advanced storage supply chain. Nearly 70 domestic suppliers of equipment, materials, and raw materials engaged in closed-door discussions with representatives from Changxin Supply Chain.

Exchange event venue