The “China Materials Conference 2018”—Advanced Microelectronics and Optoelectronics Materials Division—was successfully held.

　　From July 12 to 16, 2018, the "China Materials Conference 2018" was grandly held at the Xiamen International Convention & Exhibition Center in Fujian Province. The conference was initiated and organized by the Chinese Materials Research Society (CMRS). The meeting was chaired by Han Yafang, Director of the Academic Committee of the China Materials Conference and Secretary-General of the Chinese Materials Research Society. Academician Wei Bingbo, Chairman of the Chinese Materials Research Society, delivered the welcoming address. The conference also featured special remarks from numerous distinguished guests, including Han Jingyi, Vice Mayor and Member of the Party Leadership Group of the Xiamen Municipal Government; Professor Li Xiuwan, President of the International Union of Materials Research Societies; Prof. Osvaldo Novais Oliveira Jr., President of the Brazilian Materials Research Society; and Prof. R. Claudia Elizabeth, President of the Mexican Materials Research Society. This conference included a total of 34 sub-venues and one forum on materials from both sides of the Taiwan Strait and Hong Kong and Macao. The submitted papers covered a wide range of materials fields, including energy materials, environmental materials, advanced structural materials, functional materials, and fundamental materials research. Concurrent with the conference were a Materials Education Forum, an exhibition showcasing new materials, novel processes, and materials testing technologies. More than 5,500 professionals from renowned universities and research institutions around the world gathered in Xiamen to jointly discuss the latest developments in materials technology and industrial advancement.

　　The “Advanced Microelectronics and Optoelectronics Materials Sub-venue,” organized by the Strategic Alliance for Technological Innovation in Integrated Circuit Materials and Components Industry and co-sponsored by the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences and the Beijing Multi-Dimensional Electronic Materials Technology Development and Promotion Center, was held concurrently. Academician Wang Xi, Director of the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences, served as the Chair of the “Advanced Microelectronics and Optoelectronics Materials Sub-venue.” Academician Wang Zhengping from the Chinese University of Hong Kong served as the Honorary Chair of the sub-venue, while Academician Yang Deren from Zhejiang University, Dr. Lin Qinghuang from IBM, and Researcher Zhao Chao from the Institute of Microelectronics of the Chinese Academy of Sciences jointly served as Vice Chairs of the sub-venue. On behalf of Academician Wang Xi, Researcher Zhao Chao delivered the opening address for the sub-venue. This “Advanced Microelectronics and Optoelectronics Materials Sub-venue” featured 3 keynote speeches, 11 invited reports, 24 oral presentations, and 15 poster presentations. The content of these presentations covered various fields within microelectronics and optoelectronics materials, including: novel storage materials such as PCRAM, RRAM, and STT-MRAM; substrate materials such as Ge, Si, SOI, GOI, and compound semiconductors; new display materials and other materials used in the fabrication of integrated circuits and optoelectronic devices; advanced packaging materials; carbon-based functional materials such as carbon nanotubes and graphene; new two-dimensional materials like CN3; material characterization techniques and methods; and material design theories and computational simulations.

　　Professor Xie Jianbin from the Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, delivered a keynote speech titled “Flexible Thermally Conductive Substrate Materials and Their Application in Thermal Management of Flexible Electronic Devices.” Professor Xie argued that as electronic devices become smaller and more multifunctional, highly thermally conductive flexible substrate materials will play an irreplaceable role in the thermal management of flexible electronics. In his presentation, Professor Xie introduced his team’s recent research progress on the thermal conductivity of flexible organic substrates. Addressing key scientific challenges related to heat conduction in organic substrate materials, Professor Xie’s team has significantly enhanced the thermal conductivity of flexible organic substrates by employing approaches such as electrospinning, biomimetic engineering, and interface engineering. The resulting flexible, highly thermally conductive, and low-dielectric epoxy resin fiber membranes hold promise for replacing conventional flexible substrates and could potentially serve as substrate materials for next-generation flexible electronic devices.

　　Researcher Song Sannian from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, delivered a keynote speech titled “High-Speed, Low-Power Phase-Change Storage Materials and Applications” on behalf of Researcher Song Zhitang. Dr. Song argued that, with the rapid advancement of smartphones, the Internet of Things, large-scale data centers, smart vehicles, and artificial intelligence, the memory market will continue to expand, and phase-change memory represents the most promising next-generation storage technology. Dr. Song introduced the systematic research conducted in recent years by the team led by Researcher Song Zhitang in areas including the development of novel phase-change materials, the mechanisms behind the high-speed, reversible phase transitions in these materials, the development of single-process technologies for phase-change materials, the integration of phase-change memory processes, and the development of phase-change memory products. He highlighted in particular the R&D journey of Sc-Sb-Te—the world’s fastest phase-change material—and the emergence of the octahedral theory of phase-change units, which offer valuable insights for materials researchers. Dr. Song believes that phase-change memory is poised to become a mainstream storage technology, profoundly impacting people’s daily lives.

　　In his invited talk on “Novel Ultra-High Tunneling Magnetoresistance STT-MRAM,” Professor Zhao Weisheng from Beijing University of Aeronautics and Astronautics investigated the magnetic anisotropy properties of different capping-layer metals in MgO/CoFeB/heavy-metal structures. His study demonstrated that selecting an appropriate heavy metal can significantly enhance the vertical magnetic anisotropy of the structure. For the first time, pure current-driven magnetic moment switching was achieved in a vertical magnetic tunnel junction with a tungsten insertion layer. Both experimental results and theoretical analyses indicate that a single layer of tungsten plays a crucial role in high-performance vertical magnetic tunnel junctions, laying a solid foundation for the development of novel ultra-high tunneling magnetoresistance STT-MRAM devices.

　　In his invited talk titled “Research on the Reliability of Charge Storage Layers in 3D NAND Flash Memory,” Professor Jiezhi Chen from Shandong University provided a detailed introduction to the core mechanisms underlying the reliability issues of three-dimensional flash memory. He focused particularly on an in-depth study and exploration of charge lateral diffusion in the charge storage layer—from an atomic-level perspective—highlighting its relevance to data retention characteristics. The research revealed that while hydrogen atom passivation can effectively eliminate shallow-level traps, the introduction of excessive hydrogen atoms can instead give rise to other types of shallow-level traps. Building on these findings, Professor Chen further investigated the stability of hydrogen bonds and pointed out the correlation between characteristic changes during the erase/write cycles of 3D flash memory and the breaking of hydrogen bonds, as well as the potential for further process optimization.

　　In her invited talk titled “Charge Dynamics at the Surface and Interface of Ultrathin Films,” Associate Researcher Zhang Xiaoxian from the National Center for Nanoscience presented her research group’s recent progress in studying the movement of interfacial charges in several ultrathin film systems. By combining experimental results with computational simulations, the team discovered that interfacial charge transfer in organic semiconductors—especially ultrathin organic semiconductors (several nanometers thick)—can effectively dope the semiconductor material by introducing new impurity states near the Fermi level, thereby influencing carrier transport and, consequently, the thermoelectric effect. Additionally, the researchers achieved in-situ probing of oxygen-ion dynamics in memristors at the microscale, thus experimentally elucidating for the first time the operational mechanism underlying the oxygen-vacancy-induced conductive filaments. This research approach provides a highly precise and universal method for investigating ion motion in solids, with broad applicability to solid-state systems such as lithium-ion batteries, solar cells, and sensors. It also offers new research perspectives for gaining deeper insights into ion-related microscopic processes in these systems.

　　Researcher Sun Rong from the Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, delivered an invited talk titled “Research and Application of Advanced Electronic Packaging Materials.” Researcher Sun Rong argued that as packaging technologies evolve from two-dimensional to three-dimensional and move toward higher integration densities, the development of integrated circuits increasingly depends on breakthroughs and innovations in advanced electronic packaging technologies. Consequently, advanced electronic packaging materials will play a critically important role. In her presentation, Researcher Sun Rong provided an overview of the progress made by her team in both fundamental research and practical applications of polymer-based electronic packaging materials. By focusing on key scientific challenges related to the electrical, thermal, and mechanical properties of electronic packaging materials and aiming at breakthroughs in critical technologies, her team has adopted a holistic approach—integrating materials, processes, and devices—to carry out a series of fundamental studies and industrialization efforts in polymer-based electronic packaging materials. Researcher Sun Rong believes that this foundational research and industrialization work has laid down the raw materials and solutions necessary for the localization of high-end electronic packaging materials.

　　In his invited talk titled “Application of Germanium Pre-Amorphization Process in Advanced Titanium Silicide Contact Technology,” Researcher Jun Luo from the Institute of Microelectronics of the Chinese Academy of Sciences conducted a systematic and meticulous study on the impact of germanium pre-amorphization on the electrical performance of devices. He found that germanium pre-amorphization not only promotes the reaction forming ultra-thin titanium silicide compounds but also helps reduce contact resistivity, making it highly suitable for devices below 16/14 nm.

　　In his invited talk titled “Epitaxy and Bonding of Ge and GOI Materials and Their Applications,” Dr. Wang Guilei from the Institute of Microelectronics of the Chinese Academy of Sciences introduced a method for epitaxially growing high-quality germanium (Ge) material on 8-inch silicon substrates using chemical vapor deposition (CVD). Through processes such as bonding and thinning, he successfully fabricated strained Ge-on-insulator (sGOI) substrates with tensile strain. The surface defect density of the high-quality sGOI substrates prepared in this study is on the order of 10^6 cm^-2. After surface treatment, the surface roughness was reduced to below 1 nm. Photoluminescence (PL) analysis revealed that the bandgap of the Ge film in the GOI substrate shifted by 0.7 eV under strain. Transistors fabricated on these substrates have been experimentally verified to exhibit high carrier (hole) mobility. In the future, these sGOI substrates could be widely applied in the fabrication of high-performance optoelectronic detectors and high-mobility transistors.

　　In his invited talk on “Flexible Germanium-Silicon Thin-Film Materials and Three-Dimensional Devices,” Professor Mei Yongfeng from Fudan University presented his research findings on germanium-silicon nanofilm materials, focusing on strain engineering and self-assembly. He argued that the exceptional bending performance of ultrathin germanium-silicon nanofilms allows these films to undergo large-scale bending at the micro- and nanoscale through assembly and self-assembly processes, thereby forming three-dimensional structures such as curled tubular shapes and folded, mesoscopic architectures. This engineered transition from two-dimensional assembly to three-dimensional structures can give rise to novel physical properties—mechanical, optical, electrical, and others—thus providing an excellent platform for cutting-edge research in areas including sensing, energy harvesting and conversion, bio-integration, and flexible electronics.

　　Professor Xiaodong Pi, from the semiconductor silicon materials research team led by Academician Deren Yang of the State Key Laboratory of Silicon Materials at Zhejiang University, delivered an invited talk titled “Silicon Nanocrystals: An Important Silicon-Based Optoelectronic Material.” In his presentation, Professor Pi pointed out that silicon nanocrystals are a crucial silicon material at the nanoscale—non-toxic, low-cost, and highly stable. They possess novel electronic and optical properties that traditional bulk silicon materials lack, and hold great promise for significantly expanding the applications of silicon materials in the optoelectronics field. Professor Pi introduced their recently developed cold-plasma-based preparation method for silicon nanocrystals, with particular emphasis on effective doping and surface engineering of these nanocrystals. Their work has markedly improved the light-absorption and light-emission performance of silicon nanocrystals, not only advancing the conventional applications of silicon nanocrystals in light-emitting devices and solar cells but also opening up new avenues for their use in high-performance photodetectors and optoelectronic synaptic devices. This highlights the remarkable potential and vitality of silicon nanocrystals as a key silicon-based optoelectronic material.

　　In his invited presentation titled “Trends and Technologies in the Miniaturization of LED Chips,” Dr. Chen Kaixuan, CTO of Qianzhao Optoelectronics, introduced the trend toward miniaturization of LED backlight chips and display panel chips. He pointed out that Mini-LED will become a key weapon for the LCD industry in countering the impact of OLED, while Micro-LED has the potential to fundamentally disrupt the current competitive landscape in the display sector. Dr. Chen Kaixuan also provided an in-depth analysis of several major technical challenges facing Mini-LED and Micro-LED, and shared insights into the Mini-LED and Micro-LED chip technologies currently being researched by Qianzhao Optoelectronics.

　　In his invited talk titled “Adding Insulating Resins to Enhance the Performance of Organic Photovoltaic Devices,” Professor Hao Xiaotao from the School of Physics at Shandong University introduced the key scientific challenges and technical hurdles in the field of organic solar cells, as well as future development trends. He focused on solutions to the issues of stability and large-thickness scalability for printable organic photovoltaic devices. Furthermore, he shared specific research findings on introducing insulating resins into the active layer of devices as a third component to effectively suppress aggregate formation, thereby improving device thermal stability and achieving high-efficiency, large-thickness prototype devices.

　　In addition, 24 renowned scholars—including Professor Li Fengyu from Jinan University, Professor Hu Ping'an from Harbin Institute of Technology, Professor Yang Zaixing from Shandong University, Associate Researcher Lü Jianguo from Zhejiang University, Professor Zhong Zhenyang from Fudan University, Professor Wang Fengyun from Qingdao University, and Professor Liao Qing from Capital Normal University—delivered outstanding oral presentations.

　　Xue Yuan from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, received the Best Poster Award at the sub-conference. The presentations at this conference were truly outstanding, the atmosphere in the venue was vibrant, and the audience actively engaged in lively question-and-answer sessions. Participants had ample opportunities for exchange, which played a positive role in enhancing the academic level and technological innovation capabilities of China’s microelectronics and optoelectronics materials fields. Ms. Han Yafang, Secretary-General of the Chinese Materials Research Society and First Vice-President of the International Materials Federation, expressed her appreciation for the sub-conference’s work and encouraged Researcher Song Sannian, the sub-conference secretary, to keep up the good work and organize next year’s sub-conference even more effectively, further expanding the influence of the Advanced Microelectronics and Optoelectronics Materials Sub-conference at the China Materials Conference.