The groundbreaking ceremony for the Zhejiang Lishui Zhongxin Wafer Epitaxy Project was held with great solemnity!

At 10:28 a.m. on November 17, 2021, the groundbreaking ceremony for the epitaxial wafer project of Zhejiang Lishui Zhongxin Wafer Semiconductor Technology Co., Ltd. was solemnly held in the Lishui Economic and Technological Development Zone in Zhejiang Province. Attending the ceremony were Li Feng, Director of the Standing Committee of the Lishui Municipal People's Congress; Du Xinglin, Executive Deputy Mayor of the Lishui Municipal Government; Liu Zhiwei, Secretary of the Party Working Committee and Director of the Management Committee of the Lishui Economic and Technological Development Zone; and He Xianhan, Representative Director and President of Japan Magnetic Technology Holdings Co., Ltd., Chairman of the Board and President of FerroTec (China) Group, and Chairman of the Board of Directors of Zhejiang Lishui Zhongxin Wafer Semiconductor Technology Co., Ltd.

At the ceremony, Guo Jianyue, General Manager of Zhejiang Lishui Zhongxin Wafer Semiconductor Technology Co., Ltd., first introduced the project overview to the guests from various sectors attending the event: Zhejiang Lishui Zhongxin Wafer Semiconductor Technology Co., Ltd. was jointly established by Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. and a state-owned investment company affiliated with Lishui, Zhejiang. The total investment in the project amounts to 4 billion yuan, covering an area of 139 mu. The newly constructed plant will have a total floor area of 110,000 square meters, including production workshops, power plants, gas stations, and auxiliary facilities. The first-phase investment of 3 billion yuan will be used to build capacity for producing 1.2 million 8-inch silicon epitaxial wafers and 2.4 million 12-inch silicon epitaxial wafers annually.

The project is expected to be completed in November 2022 and will be ready for production and operation in 2023.

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