19

2021

-

04

Best Collaboration Award


Winning Project

12 Mass-production application of domestically produced photoresist in inch-scale lithography

Winning Organization

Beijing Kehua Microelectronics Materials Co., Ltd.

SMIC Integrated Circuit Manufacturing (Beijing) Limited Liability Company

Award Introduction

SMIC Beijing Fab, Lithography Department, December 2017 Since the start of cooperation with Beijing Kehua, we have been advancing the practical application research of photoresists. To date, several KrF and i-line photoresists have already been put into mass production and are in widespread use. Thanks to the close collaboration between the two parties, Beijing Kehua has achieved significant improvements in product development and quality management; meanwhile, the lithography team at SMIC’s Beijing fab has gained a deeper understanding of the underlying mechanisms of photoresists and has greatly enhanced their expertise in photoresist applications and anomaly analysis.

 

Winning Project

8 Mass Production and Application of Domestically Produced Integrated Circuit Materials in Inches

Winning Organization

HuaRun Microelectronics Co., Ltd.

Award Introduction

HuaRun Microelectronics regards the revitalization of China’s microelectronics industry as its own responsibility. It collaborates closely with domestic material suppliers to establish strategic partnerships that benefit both supply and demand sides. By achieving greater autonomy and control over materials, HuaRun Microelectronics not only fosters the joint growth of the domestic supply chain but also helps build a comprehensive, fully integrated industrial model with core competitiveness, thereby contributing to the nation’s prosperity. 2014 From 2019 onward, the 8-inch production line has cumulatively purchased domestic raw materials worth RMB 463 million.

 

Winning Project

128 Layer 3D-NAND Research and Development and Mass Production Application of Oxide Layer Polishing Pads

Winning Organization

Hubei Dinghui Microelectronics Materials Co., Ltd.

Yangtze Memory Technologies Co., Ltd.

Award Introduction

Yangtze Memory Technologies Co., Ltd. and Hubei Dinghui Microelectronics Materials Co., Ltd. are engaged in CMP. We are engaging in deep-level collaboration on polishing pads for semiconductor manufacturing processes. Based on actual requirements, we have identified key areas for focused research and pinpointed the most critical issues to address. As a result, we have developed oxide-layer polishing pads that meet the demands of the CMP process for 128-layer 3D NAND memory chips and have successfully launched them into mass production. Through this collaborative effort, we have enhanced China's independent innovation and product development capabilities in the field of CMP polishing pads, reduced market prices for these products, and laid a solid foundation for further technological advancement.

 

Winning Project

SiC Promoting the localization of substrate materials

Winning Organization

Nanjing Guosheng Electronics Co., Ltd.

Award Introduction

Nanjing Guosheng Electronics Co., Ltd. has long been committed to the R&D and production of high-quality semiconductor epitaxial materials, with 40... Years of experience in industrialization. In 2017, Guosheng Company established a team dedicated to promoting the localization of SiC (silicon carbide) substrate materials. The team conducted research on the relationship between SiC substrate material parameters and epitaxial process parameters, finalized the verification plan for substrate materials, and initiated joint R&D efforts with domestic SiC substrate suppliers. As of 2020, the team had completed large-scale verification at three domestic substrate manufacturers, and these substrates have been stably adopted by downstream chip companies, with consistently reliable product quality. Through technological accumulation and process optimization, some domestic SiC substrate manufacturers have achieved product parameter levels that are among the world’s most advanced, and their production capacity has also significantly increased, thereby making substantial contributions to the development of China’s wide-bandgap semiconductor materials industry.

 

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