Phase-change memory chip manufacturing

In recent years, thanks to the joint efforts of researchers from both academia and industry, phase-change memory technology has evolved from theoretical models into real-world products. After decades of development, PCRAM has emerged as the leading candidate for next-generation non-volatile storage technology, holding great promise to replace the current DRAM-plus-flash storage paradigm and demonstrating tremendous potential in high-speed, massive-data storage applications. This article reviews the development history and trends of phase-change memory, with a particular focus on the research achievements made by the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences and SMIC (Semiconductor Manufacturing International Corporation) in the development of new materials and process integration for phase-change memory.

　　In recent years, thanks to the joint efforts of researchers from both academia and industry, phase-change memory technology has evolved from theoretical models into real-world products. After decades of development, PCRAM has emerged as the leading candidate for next-generation non-volatile storage technology, holding great promise to replace the current DRAM-plus-Flash storage paradigm and demonstrating tremendous potential in high-speed, massive-data storage applications. This article reviews the development history and emerging trends in phase-change memory, with a particular focus on the research achievements of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and SMIC (Semiconductor Manufacturing International Corporation) in the development of new materials and process integration for phase-change memory.

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