The project “Research on Key Materials with High-K for Ultra-Large-Scale Integrated Circuits,” undertaken by Nanjing University, has successfully passed acceptance testing.

Recently passed acceptance tests. “ High for Very Large Scale Integrated Circuits K Research on Key Materials Technologies ” ( 2009ZX02039 ) The project is national. 02 The major science and technology special project, “Manufacturing Technology and Complete Process for Ultra-Large-Scale Integrated Circuits,” establishes an important forward-looking research initiative. This project primarily focuses on: 32–22 nm Technology node: Very Large Scale Integrated Circuit CMOS Technical requirements: Develop high-quality products with independent intellectual property rights. k Material precursors and their synthesis processes, developing atomic layer deposition (ALD) that is compatible with semiconductor fabrication processes. ALD ) High k Key technologies for material preparation and advanced materials with excellent performance k Materials are verified through prototype devices, ultimately providing critical high-performance components for the development of ultra-large-scale integrated circuit technology. k Materials and preparation technology support. The project’s key achievements are prominently reflected in the following aspects:

( 1 ) At high K Significant breakthroughs have been achieved in the synthesis and preparation technologies for material precursor materials; the developed... 16 The trial use of organic hafnium, organic zirconium, and organic rare-earth precursor materials has yielded excellent results. Some of these materials have been tested and applied on the pilot process development platform, achieving promising outcomes. Their application performance is comparable to that of high-quality sources from overseas.

( 2 ) Adopt independently developed high... K Material precursors developed for atomic layer deposition that are compatible with silicon-based semiconductor processes. ALD ) Key preparation technologies for gate dielectrics, and developed 8 High-performance integrated circuits for a new type of ultra-large-scale integration K Materials.

( 3 ) Invented the semi-floating-gate transistor ( SFGT ， Semi-Floating-Gate Transistor ) A new type of fundamental device—the research findings have been published in... 2013 Year 8 Published monthly by... Science magazine—this also marks a milestone for Chinese scientists in Science The first original research achievement published in the field of microelectronic devices.

( 4 ) Developed based on high K Materials HfLaO of the RRAM devices, and successfully delivered them to HuaHong, a renowned domestic microelectronics company. NEC Technology transfer. A model for electric-field-controlled resistive random-access memory has been proposed, which will... HfO2 High K Medium ALD The growth technology has been transferred to enterprises for use in RF passive components. MIM The dielectric of a capacitor.

( 5 ) Developed 4 High for ultra-large-scale integrated circuits k Material system. Three effective surface passivation methods have been developed, in... Ge and Gallium arsenide The system on the substrate proposes three passivation mechanisms: the chemical solution method, the self-cleaning method, and the method of introducing an interface control layer. It has been developed... Ge 、 Gallium arsenide and Gallium nitride Substrate and high k A method for tuning band alignment in gate dielectrics.

( 6 ) Single-crystal rare-earth materials prepared by laser molecular beam epitaxy. – Hafnium-based high k Gate dielectric film. By studying the principle of rare-earth element-induced bandgap modulation in hafnium oxide, the new type of rare-earth element has been enhanced. – Hafnium-based high k The bandgap of the gate dielectric is reduced, lowering the high... k Gate dielectric leakage current.

( 7 ) Broke through Si/SOI Surface passivation technology, high dielectric constant HfO2 Phase formation technology and direct growth on graphene surfaces high k Dielectric thin-film technology. Si/SOI With high k The interfacial layer between the thin films can be controlled to... 1nm Within, 3–4 nm High thickness k The equivalent gate oxide thickness of the thin film can reach 0.6–1 nm By doping with rare earth elements, a high-dielectric-constant material containing both cubic and tetragonal phases has been developed. HfO2 Thin film. Graphene surface using a water-based system. ALD Direct growth technology 9nmAl2O3 Thin film, dielectric constant reaches 7 , the breakdown voltage reaches 4MV/cm。

( 8 ) Utilizing self-developed Hf base ALD High source preparation K Gate dielectric and metal gate material, in MOS The device has been successfully verified, and its material and process levels have reached the international advanced standard, while also expanding high... K The application scope of the material.

During the implementation of this project, a total of invention patents were applied for. 61 items, including international patents 5 Several patent achievements have already been successfully transferred to well-known domestic enterprises. The research findings obtained from this project have laid a solid foundation for the development of new microelectronic materials technology in China.