Innovative perspectives converge and resonate, fostering a vibrant atmosphere for academic discussion—A report on the “Microelectronics and Optoelectronics Materials Division” of the 2014 China Materials Conference.

The “Microelectronics and Optoelectronics Materials Division” of the 2014 China Materials Conference, organized by the Integrated Circuit Materials Industry Technology Innovation Strategic Alliance (Materials Alliance), was successfully held from July 4 to 7, 2014, at Sichuan University. Approximately 100 participants attended the conference, including members of the Materials Alliance’s Expert Advisory Committee, directors, representatives from member units, as well as experts, scholars, and business leaders from related fields. The conference featured a total of 14 invited keynote reports, 25 plenary presentations, and 40 poster presentations. Hot topics discussed included new materials for 16-nanometer FinFETs, silicon-based III-V high-mobility materials, silicon-germanium materials, and MOSFET devices.

By the Integrated Circuit Materials Industry Technology Innovation Strategic Alliance ( Materials Alliance ) The China Materials Conference hosted by us 2014 The “Microelectronics and Optoelectronics Materials Division” at 2014 Year 7 Moon 4–7 The event was successfully held at Sichuan University. Representatives from the Materials Alliance Expert Advisory Committee, directors and member organizations, as well as experts, scholars, and business leaders from related fields, attended the meeting—approximately... 100 The person attended the meeting.

The meeting is scheduled to include: 14 One invited report, 25 a keynote speech and 40 A paper poster. Hot topics include: 16 Nano FinFETs New materials in, silicon-based III – Group V high-mobility materials, silicon-based germanium materials, and MOSFET Device, high-speed and low-power TiSbTe Phase-change storage materials, graphene-composite ceramic materials, ALD Precursor chemistry, resistive switching characteristics of metal oxides, semi-floating-gate devices, EUV Photoresist, femtosecond laser technology, organic optoelectronic materials, and more. At the conference venue, a vibrant array of innovative ideas converged, creating a rich and stimulating academic discussion atmosphere. Researcher Zhao Chao pointed out that both simulation and experimental studies have shown that... GeSi Source-Drain Pair Silicon Fin The lattice strain in the channel has a significant impact and holds promise for... p-FinFETs The hole mobility has been significantly enhanced, thereby increasing the on-state current; Researcher Pan Jiaoqing reported this finding in silicon-based devices. III-V In the study of growth of high-mobility materials, ART The method has been achieved with high quality. Gallium arsenide and InP Single crystal, but CMOS The integration solution is the key challenge; Professor Wang Jing believes that utilizing reduced-pressure chemical vapor deposition ( RPCVD ) The technology can achieve high quality on a silicon substrate. Ge Thin-film materials, Ge The mobility of channel devices will be higher than... Yes The channel has more than doubled in performance, holding promise for application in next-generation integrated circuits; following Professor Kang Jinfeng’s report. 20nm Technology generation, in various contexts NVM Among alternative technologies, STT-MRAM and RRAM Recommended as a key candidate technology, RRAM Has the greatest potential; Professor Zhang Wei introduced a semi-floating-gate device designed for ultra-fast memory and sensing operations at low voltages. He pointed out that this device is a new, fundamental, and core electronic component, with potential applications including: Dynamic Random Access Memory Core storage unit, microprocessor on-chip cache, CIS middle PN Photosensitive element, special circuit Schmitt trigger, OLED As for the drive circuit and other components, Fudan University is currently collaborating with SMIC to vigorously promote the industrialization of this device, and the prospects are promising. Other topics discussed at the conference included the impact of oxygen precipitates in Czochralski-grown silicon wafers on carrier mobility, as well as heavily doped... n Oxide-induced dislocations in Czochralski-grown silicon wafers OSF ), research on chemical-mechanical planarization of tungsten metal gates and high-purity boron trichloride analysis techniques, etc.

To organize this academic conference, the Materials Alliance has established an organizing committee chaired by Academician Wang Xi, Chairman of the Alliance’s Board of Directors and Director of the Expert Advisory Committee, with the active participation of Song Zhitang, Yang Deren, Zhao Chao, Zhang Wei, Yang Guoqiang, Kang JinFeng, Wang Jing, Shi Fang, Pan Jiaoqing, Shangguan Dongkai, Shi Ying, Cheng Yan, Yu Wenjie, and others. Each member of the committee has fully leveraged their technical expertise and influence in their respective fields to invite authoritative keynote speakers and to solicit high-quality papers for the conference. Participants generally agreed that the Microelectronics and Optoelectronics Materials Sub-Forum organized by the Materials Alliance is a cross-disciplinary academic conference bringing together experts, scholars, and industry representatives from related fields. Research teams presented their latest findings at the conference for exchange and discussion, creating a vibrant atmosphere of scholarly debate. The conference successfully promoted mutual exchange between cutting-edge research on integrated circuit technologies and materials development, as well as among materials researchers themselves. It has also provided a valuable platform for industry-academia-research collaboration, enhancing overall innovation capabilities. Participants expressed hope that similar academic events could continue to be organized in the future.

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