The "Father of FinFET" Wins U.S. Top Technology Award: Enabling Chips to Reach 14 Nanometers

According to a report on the White House’s official website, on the 22nd, U.S. Eastern Time, the list of winners of the 2015 U.S. National Science Medal and the National Medal of Technology and Innovation was announced. The list includes nine recipients of the National Medal of Science and eight recipients of the National Medal of Technology and Innovation. Among them, Chinese-American scientist Zhengming Hu was awarded the annual National Medal of Technology and Innovation. Professor Hu is the inventor of the FinFET (Fin Field-Effect Transistor). Today, companies such as Samsung and TSMC are able to produce chips using 14nm/16nm processes.

According to the White House website, Eastern Time in the United States 22 Day, 2015 The list of winners of the U.S. National Science and Technology Awards for the year has been announced, including: 9 National Science Award winner ( National Medal of Science ) and 8 National Award for Technology and Innovation ( National Medal of Technology and Innovation ) recipient.

Among them Chinese-American scientist Zhengming Hu has been awarded the National Prize for Technology and Innovation of the Year. 。

Professor Hu Zhengming is Fin-field-effect transistor ( FinFET the inventor of) Today, Samsung and TSMC can achieve this. 14nm/16nm Everyone relies on this technology. He 1947 Born in Douyacai Hutong, Beijing, and raised in Taiwan, he later enrolled at the University of California, Berkeley.

In Huawei HiSilicon Kirin 950 At the press conference, Professor Hu Zhengming made an appearance. VCR According to him, FinFET The two breakthroughs are: first, by thinning the crystal, we’ve solved the leakage current problem; second, by shifting to vertical rather than horizontal internal chip architecture, we’ve enabled upward development. 。

Hu believes that, FinFET Its true impact is that it has broken Intel’s previously announced global limitations on future semiconductors. This technology still shows no sign of reaching its limits. 。

2010 After the Chinese New Year, Bulk CMOS Process technology in 20nm At the end of the road, Professor Hu's FinFET and FD-SOI The invention of manufacturing processes has enabled Moore's Law to continue its legendary trajectory today.

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