Researchers Achieve Breakthrough in Directed Self-Assembly Semiconductor Fabrication Process

Researchers at the U.S. National Institute of Standards and Technology (NIST) and IBM have developed a trenching technique that can be used to fabricate components via self-directed assembly. The researchers say that gold nanoparticles can act like snowplows, sweeping across layers of indium phosphide or other semiconductor materials to create nanoscale channels. This technology holds promise for integrating lasers, sensors, and waveguides onto so-called lab-on-a-chip devices.

National Institute of Standards and Technology (NIST) of the United States (NIST) With IBM Researchers have developed a groove. (trenching) Technology that can be used for directed self-assembly. (Self-directed assembly) Let's build the component.

Researchers say that gold nanoparticles can function like snowplows, working on indium phosphide. (indium phosphide) or other semiconductor material layers are stirred and mixed to form nanochannels. This technology holds promise for use in so-called lab-on-a-chip applications. (lab-on-a-chip) Integrating lasers, sensors, and waveguides onto the component. (wave guides) Together with other optical components, it supports disease diagnosis, screening of experimental materials and drugs, and more. DNA Inspection, etc.

The channeling ability of gold particles was discovered by chance—in a nanowire that had failed due to contamination. (nanowires) In the formation experiment; NIST Chemical researcher Babak Nikoobakht “It was initially very disappointing,” the team said. However, by chance—and entirely unintentionally—the research team discovered that the pollutant was water. Scanning electron microscope images from the experiment revealed that gold nanoparticles combined with water vapor had formed long, straight nanochannels.

Surface-oriented nanochannel electron microscopy image formed on the surface of an indium phosphide semiconductor; these nanochannels were fabricated using gold-catalyzed vapor-phase growth. - Liquid - It is formed by the solid-state etching process, and its location is determined by the deposited gold pattern. (pattern) Defined as

(Source: NIST )

Next, the research team identified the chemical mechanisms and essential conditions required to carry out this etching process. They selectively coated the semiconductor surface with gold and then heated it. Once heating was complete, the underlying indium phosphide would dissolve into the gold nanoparticles, forming a gold alloy. They then introduced heated steam into the system and found that when the steam temperature reached Celsius... 440 When it exceeds a certain degree, it will form a long... V Typical nanochannels; the straight paths beneath those channels are governed by the regularly repeating lattice structure within the crystalline semiconductor.

Researchers can also apply the aforementioned technology to gallium phosphide. (gallium phosphide) Indium arsenide (indium arsenide) These two semiconductor materials also belong to the III-V group; these compound semiconductors are used to fabricate... LED or support applications such as communications and high-speed electronics. Nikoobakht He stated that he believes this etching process, after being adjusted, can be used to create channel patterns on materials such as silicon.

Compiled by: Judith Cheng

( Refer to the original text: Researchers Claim Self-directed Assembly Breakthrough ， by Dylan McGrath)

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