Zengfeng Di Invited Guest

Zengfeng Di, Ph.D., researcher, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, winner of the National Outstanding Youth Fund, winner of the National Outstanding 100 Doctoral Dissertation Award, Chinese Academy of Sciences "Hundred Talents Program" Born in Hai'an, Jiangsu Province in April 1979, graduated from the Department of Intensive Teaching of Basic Subjects of Nanjing University in 2001, and obtained a doctorate degree in microelectronics and solid electronics from the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences in 2006. Co-cultivation in the Department of Physics and Materials Science, City University of Hong Kong until September 2005. From 2006 to 2010, he was engaged in postdoctoral research at the US Department of Energy's Los Alamos National Laboratory. In September 2010, he was introduced as an outstanding overseas talent and was hired as a researcher by the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences. In December 2010, he was selected into the "Hundred Talents Program" of the Chinese Academy of Sciences. In October 2011, he was selected as Shanghai Pujiang Talent Plan. In 2012, he was supported by the National Outstanding Youth Fund.
He has long been engaged in the research of "silicon integrated circuit technology in the 21st century"-SOI (Silicon-on-Insulator), silicon-based semiconductor materials, flexible semiconductor thin film transfer, etc., and has achieved a series of important innovative research results in J.Am. Chem.Soc., Phys.Rev.B and Appl.Phys.Lett. And other international academic journals have published more than 60 SCI papers, applied for more than 80 domestic invention patents, 11 international invention patents, and have done many times in international academic conferences Invitation to report.