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Al and its alloy targets for 300 mm silicon wafer process
Hubei Xingfu Electronic Materials Co., Ltd
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As the key chemical in wet etching, the silicon nitride film can be removed by chemical reaction to meet the requirements of substrate surface protection layer peeling and substrate integrity. Metal ion < 50ppb, particle: 0.5um < 20, 0.3um < 50, 0.2um < 200.
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Al and its alloy targets for 300 mm silicon wafer process
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