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Xi Wang Chairman

Shanghai Institute of Microsystem and Information Technology, CAS, China
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Invited guest speaker, academician of Chinese Academy of Sciences, doctoral tutor, director of Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, academic leader of SOI direction. He graduated from Tsinghua University in 1987 and received his Ph.D. from the Shanghai Institute of Metallurgy, Chinese Academy of Sciences in 1993. In 1994, he went to work at the Australian Federal Institute of Science and Industry. In 1996, he worked as a "Humboldt" scholar at the Rosendorf Research Center in Germany for two years. In 1998, he returned to China as a researcher and doctoral tutor at the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences. He served as director of the laboratory, assistant to the director, deputy director, deputy secretary of the party committee, secretary of the party committee, and director. Long-term research on the physical phenomena of interaction between energy-carrying particle beams and solids reveals the surface microstructure, phase composition, and electronic properties of the film under the action of energy-carrying ions, and achieves the controllability of the growth of the energy-carrying ion beam film. The research results were applied to the development of silicon-on-insulator (SOI) on advanced electronic material insulators. Leading the team to study the physical and chemical processes in the process of SOI ion implantation synthesis, develop the key technology of SOI large-scale production with independent intellectual property rights, and founded Shanghai Xinao Technology Co., Ltd. - China's new generation of silicon-based integrated circuit material SOI production base , becoming one of the few companies in the world to offer commercial SOI wafers. In addition to SOI materials, it is also engaged in the next generation of silicon-based high mobility materials strained silicon, silicon and compound semiconductor fusion technology, silicon-based GaN microelectronics and optoelectronic applications, as well as ion implantation, material bonding and other integrated circuit process development. He has published more than 300 papers in major academic journals and conferences at home and abroad, and applied for 45 national invention patents, of which 22 were authorized. As the first person to be completed, he won the first prize of Shanghai Science and Technology Progress Award in 2005, the first prize of National Science and Technology Progress Award in 2006, the Outstanding Science and Technology Achievement Award of the Chinese Academy of Sciences in 2007, and the 2008 Heliang Heli Fund Science and Technology Progress Award. Nearly 30 graduate students were trained, and one of them was awarded the special prize of the Chinese Academy of Sciences Dean's Scholarship. At present, he is also the deputy head of the overall special expert group of the national medium- and long-term science and technology planning "very large-scale integrated circuit manufacturing equipment and complete sets of technology". He was hired as a member of the International Committee of the International Society of Bohmische Physics and International Committee of Surface Modification Sequences for Ion Beam Materials.

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