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Qinghuang Lin Vice Chairman

ASML, Technology Development Center USA
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Dr. Lin Qinghuang is a researcher at IBM Thomas J. Watson Research Center. Dr. Lin has more than 15 years of work experience in the semiconductor industry at IBM. He has participated in or presided over IBM ’s 0.25μm-7nm CMOS technology, 512Mbit & 1GBitDRAM and other technology development and other exploratory research projects, including semiconductor research, development, Engineering, management and technical strategies, etc. Dr. Lin has more than 100 US patents. He is also the recipient of 23 IBM Outstanding Achievement Awards, and is the organizer or speaker of several international academic conferences. He has published more than 60 professional papers, edited 6 monographs and 9 conference proceedings, and published more than 45 master reports or invited reports. Dr. Lin is the Associate Editor of Micro / Nanolithography, MEMS, MOEMS Magazine, and the Guest Editor of Materials Research focus issue on self-assembly and directed assembly of advanced materials. Dr. Lin won the IBM Research Contribution Award in 2002 for the subject of "Invention, Development, and Implementation of 248 Nanometer Double Barrier Technology in Manufacturing". This IBM's double-layer barrier technology also enabled IBM, which has been engaged in semiconductor technology innovation for nearly 40 years, to win the National Technology Medal (the highest honor awarded by the US President to the top US innovators). In 2014, Dr. Lin was appointed as a member of the American Chemical Society.
Dr. Lin graduated from Tsinghua University with a master's degree in his early years. He obtained a doctorate degree from the University of Michigan in Ann Arbor, Michigan, USA, and engaged in postdoctoral research at the University of Texas at Austin.

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