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H3PO4

Thekeychemicalsinwetetchingcanremovethesiliconnitridefilmbychemicalreaction,andachievetherequirementsofgoodstrippingandsubstrateintegrityofthesubstratesurfaceprotectivelayer.Metalions<50ppb,particles:
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The key chemicals in wet etching can remove the silicon nitride film by chemical reaction, and achieve the requirements of good stripping and substrate integrity of the substrate surface protective layer. Metal ions <50 ppb, particles: 0.5 um < 20, 0.3 um < 50, 0.2 um < 200.
 
Hubei Xingfu Electronic Material Co., Ltd.
Corresponding parameter set not found, please add it in property template of background
暂未实现,敬请期待
暂未实现,敬请期待
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