H3PO4

Thekeychemicalsinwetetchingcanremovethesiliconnitridefilmbychemicalreaction,andachievetherequirementsofgoodstrippingandsubstrateintegrityofthesubstratesurfaceprotectivelayer.Metalions<50ppb,particles:

Detail

The key chemicals in wet etching can remove the silicon nitride film by chemical reaction, and achieve the requirements of good stripping and substrate integrity of the substrate surface protective layer. Metal ions <50 ppb, particles: 0.5 um < 20, 0.3 um < 50, 0.2 um < 200.