Telluride narrow bandgap semiconductor infrared photoelectric material and device

The telluride semiconductor mainly refers to a compound including GaSb, AlSb, InAs, and the like having a lattice constant of about 0.61 nm and various various alloys thereof. The InAs/GaSb superlattice in this system is a type II band structure, which can effectively suppress Auger recombination. Its photodetection response band covers an ultra-wide infrared region of 2-30 μm; InGaAsSb quantum well is a type I band, which is developing. High-power and narrow-linewidth lasers in the 2-4 micron range are promising; their modulation-doped heterojunctions have room temperature ultra-high mobility characteristics, making them ideal for manufacturing low-power, high-speed microelectronic devices. In recent years, with the continuous breakthrough of key technologies such as germanium superlattice, quantum well, molecular beam epitaxy and surface passivation of HEMT materials, the technical performance of related optoelectronic devices has rapidly improved, and experimental results are facing important opportunities for application development. Since 2005, the research group has carried out molecular beam epitaxy research on a series of low-dimensional structural materials such as germanide superlattice, quantum well, heterojunction modulation doping, etc., and successively developed a large 2-20μm wide spectrum coverage. Band infrared detector, in which the 640x512 medium long wave focal plane and the two-color focal plane in the 2-12 micron band are imaged, and the working temperature of the mid-infrared high working temperature detector (at room temperature background noise limit D*~4×1011) is close to 200K, its 320x256 focal plane has an operating temperature of 150K. The newly developed light cone structure superlattice ultra-wide spectrum detector has achieved a broad spectrum response of 0.4-5 microns. The laser has reported a 2 micron high power laser with FP cavity structure. The room temperature continuous output power reaches 1.5W, the bar laser power is greater than 8.5W; the DFB narrow linewidth laser side touch suppression ratio reaches 23dB, and the room temperature continuous output power reaches 10mW. The developed InAs/AlSb-doped HEMT material has a room temperature electron mobility of 27,000 and a hole mobility of 1000 cm2/VS, which is one of the best international standards. The research results of telluride epitaxial materials have effectively promoted the rapid development of independent research and development technology based on germanium semiconductor infrared optoelectronic devices. In particular, single crystal substrates and epitaxial materials have broken through the western blockade, and detectors and lasers have been widely used from the laboratory. Thus, a new direction of high-performance infrared detectors and high-power infrared lasers for the new photoelectric material system of germanium is gradually formed!