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Semiconductor optoelectronic materials - from 3D to 0D, from classic applications to quantum information

Semiconductor optoelectronic materials - from 3D to 0D, from classic applications to quantum information

Source:
2017/11/01
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This work is aimed at the new generation of optoelectronic information systems, the development of new semiconductor optoelectronic functional materials preparation technology, to meet the needs of high-speed, integrated, and quantized semiconductor optoelectronic devices. The material preparation uses precision techniques such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), and atmospheric pressure chemical vapor deposition (CVD); the device is fabricated using standard semiconductor processes and micro-nano processing techniques. A high-density 1.3um-InAs/GaAs quantum dot material was prepared by MBE. The 1.3um laser made of this material has a single-layer gain of 7cm-1, a direct modulation rate of >40Gbps, a 10-70°C output stability, and a maximum operating temperature. 200 ° C; this laser has been used in fiber-optic communication networks. Position-controllable quantum dot arrays were prepared by microprobe oxidation lithography combined with atomic hydrogen assisted MBE or MOCVD; quantum dots with a minimum pitch of 50 nm and positioning accuracy of 3 nm; integrated single photon source for quantum communication, and all-optical quantum calculation loop A technical solution is provided. A 1.3-1.55um quantum dot single photon source was prepared by MOCVD, and the single photon purity reached 0.001. The single photon source was used to realize the 120km fiber quantum key distribution. Based on the combination of MBE and MOCVD, the InGaAs/GaAs/InGaP double quantum well laser was fabricated to achieve strong single mode lasing of 1.064um and 500mW. With the frequency doubling technique, a 532nm pure green laser with continuous output of 100mW was fabricated. The green light source of the laser display provides an efficient solution. The InGaAsP/InP avalanche photodetector (APD) material was prepared by MOCVD; the Geiger mode APD made by this method has a photon detection efficiency of >25% and a dark count rate of <20 kHz (corresponding to the international level); 32 single photon detector arrays make the single photon focal plane detector further localized. The Si-APD epitaxial material was prepared by atmospheric pressure CVD; the APD device made with the highest gain of 800 (the highest in the world) and the responsivity of 300-600A/W, the line uniformity is good, and can be used for the laser 3D imaging radar. Laser guidance letters, etc. In summary, this paper carried out the development of semiconductor optoelectronic materials, obtained a variety of high-performance materials from 3D bulk structure to 0D quantum dots, meeting the needs of many aspects from classical optoelectronic devices to quantum information systems.