Phase change memory chip manufacturing

In recent years, phase change storage technology has become a real product from theoretical models under the joint efforts of academic and industrial researchers. After several decades of development, PCRAM has become the best solution for the next generation of non-volatile memory technology, and is expected to replace the storage mode of DRAM+Flash, which has great potential in high-speed and mass storage. This paper introduces the development history and development trend of phase change memory, focusing on the research results of new material development and process integration of phase change memory in Shanghai Microsystems Institute of China Academy of Sciences and SMIC.