From July 10 to 14, 2015, the most important series of China Materials Research Society “China Materials Conference 2015” was held in Guiyang City, Guizhou Province. The conference has 30 parallel sessions, including 4 international parallel sessions and 26 domestic parallel sessions, covering energy and environmental materials, new functional materials, ceramics and polymer materials, high-performance structural materials, material design, preparation and evaluation.
In order to promote the exchanges and cooperation between experts, scholars and business people in the field of microelectronics and optoelectronic materials in China, and to enhance the academic level and technological innovation capability in the field of microelectronics and optoelectronics in China, the Chinese Materials Conference 2015 - Microelectronics and Optoelectronics Parallel Session, undertook by the Integrated Circuit Materials & Components Industry Technology Innovative Alliance and jointly supported by Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and Beijing Multidimensional Electronic Materials Technology Development and Promotion Center, and as one of the parallel sessions of Chinese Materials Conference 2015, was successfully held in Guizhou International Conference Center, Guiyang, from July 11 to 13. Wang Xi, Academician of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, served as Chairman of the "Microelectronics and Optoelectronic Materials Parallel Session", and Song Zhitang, Researcher of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and Yang Deren, Professor of Zhejiang University, served as the Chairman of the parallel session, Shi Ying, Secretary General of the Integrated Circuit Materials & Components Industry Technology Innovative Alliance prepared the meeting. Entrusted by Academician Wang Xi, Professor Zhao Deren, on behalf of Academician Wang Xi, gave an opening speech at the parallel session. More than 80 representatives from all over the country gathered together to discuss the latest achievements in the field of microelectronics and optoelectronics.
A three-day academic report was conducted in the meeting in the form of invited reports, oral reports and wall papers. These reports cover the latest development in microelectronics and optoelectronics, including substrate materials such as Si, Ge, SOI, GOI, SiC, and compound semiconductors, high-k/metal gate stacks, low-k materials, GeSi epitaxial layers, GeSn epitaxial layers, PCRAM memory materials, and RRAM dielectric materials for integrated circuit and optoelectronic device fabrication, new thin film materials such as magnetic thin films for STT-MRAM, integrated circuit manufacturing process materials such as photoresists, DSA, various CVD and ALD precursors, CMP polishing materials, process chemicals and target materials, new display materials, special packaging materials, carbon-based functional materials such as carbon nano tubes and graphene, material detection technology and methods, material design theory and computational simulation.