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Innovative ideas gathered in Qi Ming Academic atmosphere is strong ——Record of China Materials Conference 2014 “Microelectronics

Innovative ideas gathered in Qi Ming Academic atmosphere is strong ——Record of China Materials Conference 2014 “Microelectronics

Source:
2018/09/24
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The China Materials Conference 2014 “Microelectronics and Optoelectronic Materials Branch” hosted by the Integrated Circuit Materials Industry Technology Innovation Strategic Alliance (ICMTIA) was successfully held at Sichuan University on July 4-7, 2014. About 100 members of the Materials Alliance Expert Advisory Committee, directors and member units, as well as experts, scholars and business people from related fields attended the meeting.
 
The conference arranged 14 invited reports, 25 conference speeches and 40 paper posters. Hot topics include new materials in 16nm FinFETs, silicon-based III-V high mobility materials, silicon based germanium materials and MOSFET devices, high speed low power TiSbTe phase change memory materials, graphene composite ceramic materials, ALD precursor chemistry , metal oxide resistive properties, semi-floating gate devices, EUV photoresist, femtosecond laser technology, organic optoelectronic materials. Various innovative ideas were put forward at the conference, and the atmosphere of academic discussion was warm. Researcher Zhao Chao pointed out that the simulation and experimental work show that the GeSi source and drain have a significant influence on the lattice strain of the silicon Fin channel, and it is expected to greatly improve the hole mobility of p-FinFETs, thereby increasing the on-state current; Pan Jiaoqing Researchers report that in the silicon-based III-V high mobility material growth study, the ART method has obtained high quality GaAs and InP single crystals, but the CMOS integration scheme is difficult; Professor Wang Jing believed that the use of reduced pressure chemical vapor deposition ( RPCVD technology can obtain high-quality Ge thin film materials on silicon substrates. The mobility of Ge-channel devices will be more than double that of Si-channels, and it is expected to be applied to next-generation integrated circuits. Professor Kang Jinfeng reports 20nm technology generation. Among various NVM replacement technologies, STT-MRAM and RRAM are recommended as key candidate technologies, and RRAM has the greatest potential; Professor Zhang Wei introduced a semi-floating gate device for low-voltage ultra-fast memory and sensing operation, indicating that the device is a new, basic, core electronic device. Potential applications include DRAM core memory cells, microprocessor on-chip buffers, PN junction sensing in CIS, and special circuit Schmidt contacts. Device, OLED drive circuits, etc., they are currently Fudan University in cooperation with SMIC to promote the industrialization of the device, the prospects worth the wait. Other topics of the meeting were the effect of oxygen precipitation on the carrier mobility in the Czochralski silicon wafer, the oxidation induced stacking fault (OSF) of the heavily doped n-type Czochralski silicon wafer, the chemical mechanical planarization of the tungsten metal gate, and the high purity. Research on boron trichloride analysis technology.
 
The Materials Alliance was specially established to organize this academic conference. The chairman of the alliance, the director of the expert advisory committee, the academician Wang Wei, the chairman, Song Zhizhen, Yang Deren, Zhao Chao, Zhang Wei, Yang Guoqiang, Kang Jinfeng, Wang Jing, Shi Fang, Pan Jiaoqing Organizing committees such as Shangguan Dongyu, Shijie, Chengyan, and Yu Wenjie. Members have given full play to their technical expertise and influence in relevant professional fields. This meeting invited authoritative rapporteurs and invited the organizing committee to collect high-level papers. Participants generally agreed that the Microelectronics and Optoelectronic Materials Subcommittee organized by the Materials Alliance is a cross-border academic conference that organizes experts, scholars and business people from related fields. The research teams will bring the latest research progress to the meeting and discuss with you. The academic discussion atmosphere of the conference was enthusiastic, and the purpose of promoting the mutual research of integrated circuit technology and the development of materials technology and material research was achieved. The communication platform was established for the cooperation of industry, university and research to enhance the comprehensive innovation ability. I hope to continue to organize such academics in the future. activity.