From July 8th to 12th, 2017, “China Materials Conference 2017” was held in Ningxia International Hall of Yinchuan City, Ningxia Hui Autonomous Region. The conference consisted of 35 chapters and 2 international forums covering topics such as energy materials, environmental materials, advanced structural materials, functional materials, and basic materials research. The number of participants exceeded 5,000.

 

The "Advanced Microelectronics and Optoelectronic Materials Subcommittee" jointly sponsored by the Integrated Circuit Materials and Components Industry Technology Innovation Strategic Alliance, the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences and the Beijing Multidimensional Electronic Materials Technology Development and Promotion Center. This chapter aims to promote the exchanges and cooperation between experts, scholars and business people in the field of microelectronics and optoelectronic materials in China, share the latest achievements in the research of microelectronics and optoelectronic materials, and achieve mutual promotion and common improvement, and further enhance China's microelectronics. Academic level and technological innovation capabilities in the field of optoelectronic materials.

 

Academician Wang Wei, Director of Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, served as Chairman of the "Advanced Microelectronics and Optoelectronic Materials Sub-meeting Session", Academician Wang Zhengping of the Chinese University of Hong Kong as Honorary Chairman of the Board of Directors, Researcher Zhao Chao of the Institute of Microelectronics, Chinese Academy of Sciences, IBM Lin Qinghuang The Ph.D. and Professor Yang Deren from Zhejiang University jointly served as the vice chairman of the sub-meeting. Entrusted by Academician Wang Wei, Dr. Zhao Chao, on behalf of Academician Wang Wei, gave an opening speech at the meeting. More than 80 representatives from all over the country gathered together to discuss the latest achievements in the field of microelectronics and optoelectronic materials. The venue held a three-day academic exchange in the form of keynote speeches, invitation reports, oral reports and posters. These reports cover a wide range of fields in the field of microelectronics and optoelectronic materials, including substrate materials such as Si, Ge, SOI, GOI, SiC, and compound semiconductors; High-k, Low-k, GeSi, GeSn, PCRAM, RRAM, STT -MRAM and other materials used in the manufacture of integrated circuits and optoelectronic devices; new display materials; integrated circuit manufacturing process materials such as photoresist, DSA, CVD and ALD precursors, CMP polishing materials, process chemicals, targets, etc.; Materials; advanced packaging materials; carbon-based functional materials such as carbon nanotubes and graphene; new two-dimensional materials; new storage materials and technologies; material detection techniques and methods; material design theory and computational simulation.